We report the outcome of atomic force microscopy local anodic oxidation experiments on 6H-SiC in air. Oxide thickness can be easily tuned by varying applied voltage and pulse duration. The height and the aspect ratio of single dots produced by single DC pulses are remarkably higher than what was reported previously, with self limiting heights exceeding 100 nm. We propose that the diminished density and the change in chemical composition of the oxide grown on SiC with respect to oxide grown under similar condition on Si cause a drop in the activation energy of oxanions diffusion within the newly formed oxide layer.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Oct 14 2013|
Bibliographical noteFunding Information:
This work was entirely supported by the Italian Institute of Technology (IIT); a special appreciation for the support coming from Lorenzo Ferrara and Eliana Rondanina.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)