Scaling of Anomalous Hall Effects in Facing-Target Reactively Sputtered Fe4N Films

Yan Zhang, Wenbo Mi, Xiaocha Wang, Xixiang Zhang

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21 Scopus citations


Anomalous Hall effect (AHE) in the reactively sputtered epitaxial and polycrystalline γ′-Fe4N films is investigated systematically. The Hall resistivity is positive in the entire temperature range. The magnetization, carrier density and grain boundaries scattering have a major impact on the AHE scaling law. The scaling exponent γ in the conventional scaling of is larger than 2 in both the epitaxial and polycrystalline γ′-Fe4N films. Although γ>2 has been found in heterogeneous systems due to the effects of the surface and interface scattering on AHE, γ>2 is not expected in homogenous epitaxial systems. We demonstrated that γ>2 results from residual resistivity (ρxx0) in γ′-Fe4N films. Furthermore, the side-jump and intrinsic mechanisms are dominant in both epitaxial and polycrystalline samples according to the proper scaling relation.
Original languageEnglish (US)
Pages (from-to)15435-15441
Number of pages7
JournalPhys. Chem. Chem. Phys.
Issue number23
StatePublished - 2015

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KAUST Repository Item: Exported on 2020-10-01


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