Scaling law of anomalous Hall effect in Fe/Cu bilayers

W. J. Xu, B. Zhang, Z. Wang, S. S. Chu, W. Li, Z. B. Wu, R. H. Yu, X. X. Zhang

Research output: Contribution to journalArticlepeer-review

29 Scopus citations


The scaling of anomalous Hall resistivity on longitudinal resistivity has been intensively studied in different magnetic systems, including multilayer and granular films, to examine whether a skew scattering or a side jump mechanism dominates in the origin of anomalous Hall effect (AHE). The scaling law is based on the premise that both resistivities are a consequence of electron scattering by the imperfections in the materials. By studying the anomalous Hall effect in the simple Fe/Cu bilayers, it was demonstrated that the measured anomalous Hall effect should not follow the scaling laws derived from skew scattering or side jump mechanism due to the short-circuit and shunting effects of the non-magnetic layers.

Original languageEnglish (US)
Pages (from-to)233-237
Number of pages5
JournalEuropean Physical Journal B
Issue number2
StatePublished - Sep 2008

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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