Scalable fabrication of a complementary logic inverter based on MoS 2 fin-shaped field effect transistors

Yann Wen Lan; Po Chun Chen; Yun Yan Lin; Ming Yang Li; Lain-Jong Li; Yu Ling Tu; Fu Liang Yang; Min Cheng Chen; Kai Shin Li

doi:10.1039/c8nh00419f

Scalable fabrication of a complementary logic inverter based on MoS 2 fin-shaped field effect transistors

Yann Wen Lan, Po Chun Chen, Yun Yan Lin, Ming Yang Li, Lain-Jong Li, Yu Ling Tu, Fu Liang Yang, Min Cheng Chen, Kai Shin Li

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36 Scopus citations

Abstract

Integration of high performance n-type and p-type field-effect transistors with complementary device operation in the same kind of layered materials is highly desirable for pursuing low power and flexible next-generation electronics. In this work, we have shown a well-mannered growth of MoS2 on a fin-shaped oxide structure and integration of both n-type and p-type MoS2 by using a traditional implantation technique. With the advance of the fin-shaped structure, the maxima and the effective ON current density for the MoS2 fin-shaped field-effect transistors are respectively obtained to be about 50 μA μm−1 (normalized by the circumference of the fin) and around 500 μA μm−1 (only normalized by the fin size), while its ON/OFF ratio is more than 106 with low OFF current of a few pA. Based on our n-type and p-type MoS2 fin-shaped field-effect transistors, the complementary MoS2 inverter with a high DC voltage gain of more than 20 is acquired. Our results provide evidence for complementary 2D material operation in the same materials, a promising avenue for the development of high performance and high-density complementary 2D electronic devices.

Original language	English (US)
Pages (from-to)	683-688
Number of pages	6
Journal	Nanoscale Horizons
Volume	4
Issue number	3
DOIs	https://doi.org/10.1039/c8nh00419f
State	Published - 2019

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the National Science Council, Taiwan under contract No. MOST 105-2112-M-003-016-MY3. This work was also in part supported by the National Nano Device Laboratories. Y.-W. Lan, P.-C. Chen, Y.-Y. Lin, Y.-L. Tu and K.-S. Li fabricated the devices and carried out OM, SEM, TEM, Raman measurements and the electrical characterization. M.-Y. Li and L.-J. Li synthesized the 2D materials. Y.-W. Lan, M.-C. Chen, F.-L. Yang and K.-S. Li supervised the study. Y.-W. Lan, M.-C. Chen and K.-S. Li analyzed the data and wrote the paper with significant inputs from all authors. All authors have read and approved the manuscript. All authors discussed the results and commented on the manuscript.

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10.1039/c8nh00419f

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@article{a14cd499a8634327bed85ea45971a4be,

title = "Scalable fabrication of a complementary logic inverter based on MoS 2 fin-shaped field effect transistors",

abstract = "Integration of high performance n-type and p-type field-effect transistors with complementary device operation in the same kind of layered materials is highly desirable for pursuing low power and flexible next-generation electronics. In this work, we have shown a well-mannered growth of MoS2 on a fin-shaped oxide structure and integration of both n-type and p-type MoS2 by using a traditional implantation technique. With the advance of the fin-shaped structure, the maxima and the effective ON current density for the MoS2 fin-shaped field-effect transistors are respectively obtained to be about 50 μA μm−1 (normalized by the circumference of the fin) and around 500 μA μm−1 (only normalized by the fin size), while its ON/OFF ratio is more than 106 with low OFF current of a few pA. Based on our n-type and p-type MoS2 fin-shaped field-effect transistors, the complementary MoS2 inverter with a high DC voltage gain of more than 20 is acquired. Our results provide evidence for complementary 2D material operation in the same materials, a promising avenue for the development of high performance and high-density complementary 2D electronic devices.",

author = "Lan, {Yann Wen} and Chen, {Po Chun} and Lin, {Yun Yan} and Li, {Ming Yang} and Lain-Jong Li and Tu, {Yu Ling} and Yang, {Fu Liang} and Chen, {Min Cheng} and Li, {Kai Shin}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the National Science Council, Taiwan under contract No. MOST 105-2112-M-003-016-MY3. This work was also in part supported by the National Nano Device Laboratories. Y.-W. Lan, P.-C. Chen, Y.-Y. Lin, Y.-L. Tu and K.-S. Li fabricated the devices and carried out OM, SEM, TEM, Raman measurements and the electrical characterization. M.-Y. Li and L.-J. Li synthesized the 2D materials. Y.-W. Lan, M.-C. Chen, F.-L. Yang and K.-S. Li supervised the study. Y.-W. Lan, M.-C. Chen and K.-S. Li analyzed the data and wrote the paper with significant inputs from all authors. All authors have read and approved the manuscript. All authors discussed the results and commented on the manuscript.",

year = "2019",

doi = "10.1039/c8nh00419f",

language = "English (US)",

volume = "4",

pages = "683--688",

journal = "Nanoscale Horizons",

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publisher = "Royal Society of Chemistry",

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T1 - Scalable fabrication of a complementary logic inverter based on MoS 2 fin-shaped field effect transistors

AU - Lan, Yann Wen

AU - Chen, Po Chun

AU - Lin, Yun Yan

AU - Li, Ming Yang

AU - Li, Lain-Jong

AU - Tu, Yu Ling

AU - Yang, Fu Liang

AU - Chen, Min Cheng

AU - Li, Kai Shin

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the National Science Council, Taiwan under contract No. MOST 105-2112-M-003-016-MY3. This work was also in part supported by the National Nano Device Laboratories. Y.-W. Lan, P.-C. Chen, Y.-Y. Lin, Y.-L. Tu and K.-S. Li fabricated the devices and carried out OM, SEM, TEM, Raman measurements and the electrical characterization. M.-Y. Li and L.-J. Li synthesized the 2D materials. Y.-W. Lan, M.-C. Chen, F.-L. Yang and K.-S. Li supervised the study. Y.-W. Lan, M.-C. Chen and K.-S. Li analyzed the data and wrote the paper with significant inputs from all authors. All authors have read and approved the manuscript. All authors discussed the results and commented on the manuscript.

PY - 2019

Y1 - 2019

N2 - Integration of high performance n-type and p-type field-effect transistors with complementary device operation in the same kind of layered materials is highly desirable for pursuing low power and flexible next-generation electronics. In this work, we have shown a well-mannered growth of MoS2 on a fin-shaped oxide structure and integration of both n-type and p-type MoS2 by using a traditional implantation technique. With the advance of the fin-shaped structure, the maxima and the effective ON current density for the MoS2 fin-shaped field-effect transistors are respectively obtained to be about 50 μA μm−1 (normalized by the circumference of the fin) and around 500 μA μm−1 (only normalized by the fin size), while its ON/OFF ratio is more than 106 with low OFF current of a few pA. Based on our n-type and p-type MoS2 fin-shaped field-effect transistors, the complementary MoS2 inverter with a high DC voltage gain of more than 20 is acquired. Our results provide evidence for complementary 2D material operation in the same materials, a promising avenue for the development of high performance and high-density complementary 2D electronic devices.

AB - Integration of high performance n-type and p-type field-effect transistors with complementary device operation in the same kind of layered materials is highly desirable for pursuing low power and flexible next-generation electronics. In this work, we have shown a well-mannered growth of MoS2 on a fin-shaped oxide structure and integration of both n-type and p-type MoS2 by using a traditional implantation technique. With the advance of the fin-shaped structure, the maxima and the effective ON current density for the MoS2 fin-shaped field-effect transistors are respectively obtained to be about 50 μA μm−1 (normalized by the circumference of the fin) and around 500 μA μm−1 (only normalized by the fin size), while its ON/OFF ratio is more than 106 with low OFF current of a few pA. Based on our n-type and p-type MoS2 fin-shaped field-effect transistors, the complementary MoS2 inverter with a high DC voltage gain of more than 20 is acquired. Our results provide evidence for complementary 2D material operation in the same materials, a promising avenue for the development of high performance and high-density complementary 2D electronic devices.

UR - http://hdl.handle.net/10754/656451

UR - http://xlink.rsc.org/?DOI=C8NH00419F

UR - http://www.scopus.com/inward/record.url?scp=85063393513&partnerID=8YFLogxK

U2 - 10.1039/c8nh00419f

DO - 10.1039/c8nh00419f

M3 - Article

SN - 2055-6756

VL - 4

SP - 683

EP - 688

JO - Nanoscale Horizons

JF - Nanoscale Horizons

IS - 3

ER -

Scalable fabrication of a complementary logic inverter based on MoS 2 fin-shaped field effect transistors

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