Integration of high performance n-type and p-type field-effect transistors with complementary device operation in the same kind of layered materials is highly desirable for pursuing low power and flexible next-generation electronics. In this work, we have shown a well-mannered growth of MoS2 on a fin-shaped oxide structure and integration of both n-type and p-type MoS2 by using a traditional implantation technique. With the advance of the fin-shaped structure, the maxima and the effective ON current density for the MoS2 fin-shaped field-effect transistors are respectively obtained to be about 50 μA μm−1 (normalized by the circumference of the fin) and around 500 μA μm−1 (only normalized by the fin size), while its ON/OFF ratio is more than 106 with low OFF current of a few pA. Based on our n-type and p-type MoS2 fin-shaped field-effect transistors, the complementary MoS2 inverter with a high DC voltage gain of more than 20 is acquired. Our results provide evidence for complementary 2D material operation in the same materials, a promising avenue for the development of high performance and high-density complementary 2D electronic devices.
|Original language||English (US)|
|Number of pages||6|
|State||Published - 2019|
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the National Science Council, Taiwan under contract No. MOST 105-2112-M-003-016-MY3. This work was also in part supported by the National Nano Device Laboratories. Y.-W. Lan, P.-C. Chen, Y.-Y. Lin, Y.-L. Tu and K.-S. Li fabricated the devices and carried out OM, SEM, TEM, Raman measurements and the electrical characterization. M.-Y. Li and L.-J. Li synthesized the 2D materials. Y.-W. Lan, M.-C. Chen, F.-L. Yang and K.-S. Li supervised the study. Y.-W. Lan, M.-C. Chen and K.-S. Li analyzed the data and wrote the paper with significant inputs from all authors. All authors have read and approved the manuscript. All authors discussed the results and commented on the manuscript.