TY - GEN
T1 - Scalability of h-BN Based Memristors: Yield and Variability Considerations
AU - Abdelrahman, Abdelrahman S.
AU - ElSawy, Hesham
AU - Lanza, Mario
AU - Akinwande, Deji
AU - Al-Dirini, Feras
N1 - KAUST Repository Item: Exported on 2023-07-25
PY - 2023/6/11
Y1 - 2023/6/11
N2 - This paper investigates the impact of scalability on h-BN based memristors, with a focus on yield and variability. Motivated by the atomic-defect-enabled operation mechanism of h-BN memristors, a stochastic geometry modelling framework is employed to characterize the distribution of atomic defects across a large array of devices. This is coupled with a probabilistic defect activation model to characterize the SET voltage. The model is benchmarked to experimental results for monolayer and multi-layer h-BN devices. The presented results highlight the profound impact of scalability on device yield, device-to-device variability and SET voltage.
AB - This paper investigates the impact of scalability on h-BN based memristors, with a focus on yield and variability. Motivated by the atomic-defect-enabled operation mechanism of h-BN memristors, a stochastic geometry modelling framework is employed to characterize the distribution of atomic defects across a large array of devices. This is coupled with a probabilistic defect activation model to characterize the SET voltage. The model is benchmarked to experimental results for monolayer and multi-layer h-BN devices. The presented results highlight the profound impact of scalability on device yield, device-to-device variability and SET voltage.
UR - http://hdl.handle.net/10754/693210
UR - https://ieeexplore.ieee.org/document/10183973/
U2 - 10.23919/snw57900.2023.10183973
DO - 10.23919/snw57900.2023.10183973
M3 - Conference contribution
BT - 2023 Silicon Nanoelectronics Workshop (SNW)
PB - IEEE
ER -