Sb doping behavior and its effect on crystal structure, conductivity and photoluminescence of ZnO film in depositing and annealing processes

T. Yang; B. Yao; T. T. Zhao; G. Z. Xing; H. Wang; H. L. Pan; R. Deng; Y. R. Sui; L. L. Gao; H. Z. Wang; T. Wu; D. Z. Shen

doi:10.1016/j.jallcom.2011.02.080

Sb doping behavior and its effect on crystal structure, conductivity and photoluminescence of ZnO film in depositing and annealing processes

T. Yang, B. Yao^*, T. T. Zhao, G. Z. Xing, H. Wang, H. L. Pan, R. Deng, Y. R. Sui, L. L. Gao, H. Z. Wang, T. Wu, D. Z. Shen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

The Sb-doped ZnO (ZnO:Sb) and undoped ZnO films with wurtzite structure and (0 0 2) preferred orientation were deposited on Si(1 0 0) substrate at 550 °C. It is deduced from XRD and XPS measurements that the Sb in the as-grown ZnO:Sb has high oxidation state and dopes in the form of oxygen-rich Sb-O clusters, which results in a large inner stress and a great increase of the c-axis lattice constant. After annealing at 750 °C under vacuum, the c-axis lattice constant of the ZnO:Sb decreases sharply to near the value of ZnO bulk, the electrical properties change from n-type to p-type and the PL intensity ratio of the visible to ultraviolet emission band goes down greatly, as the Sb content increases from 0 to 2.1 at.%. EDS and XRD measurements indicate that some of Sb dopants escape from the ZnO:Sb films and the oxygen-rich Sb-O clusters vanished after the annealing process. The effect of the change in Sb doping behavior on crystal structure, conductivity and PL is discussed in detail.

Original language	English (US)
Pages (from-to)	5426-5430
Number of pages	5
Journal	Journal of Alloys and Compounds
Volume	509
Issue number	17
DOIs	https://doi.org/10.1016/j.jallcom.2011.02.080
State	Published - Apr 28 2011
Externally published	Yes

Bibliographical note

Funding Information:
This work is supported by the Key Project of National Natural Science Foundation of China under grant no. 50532050 , the “ 973 ” program under grant no. 2006CB604906 , the Innovation Project of Chinese Academy of Sciences , the National Natural Science Foundation of China under grant nos. 6077601 , 60506014 , 10674133 , 60806002 and 10874178 , National Found for Fostering Talents of basic Science under grant no. J0730311 .

Keywords

Magnetron sputtering
Sb-doping
p-type ZnO

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2011.02.080

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Yang, T., Yao, B., Zhao, T. T., Xing, G. Z., Wang, H., Pan, H. L., Deng, R., Sui, Y. R., Gao, L. L., Wang, H. Z., Wu, T., & Shen, D. Z. (2011). Sb doping behavior and its effect on crystal structure, conductivity and photoluminescence of ZnO film in depositing and annealing processes. Journal of Alloys and Compounds, 509(17), 5426-5430. https://doi.org/10.1016/j.jallcom.2011.02.080

@article{164486b278c1475ba432d8e205238f8d,

title = "Sb doping behavior and its effect on crystal structure, conductivity and photoluminescence of ZnO film in depositing and annealing processes",

abstract = "The Sb-doped ZnO (ZnO:Sb) and undoped ZnO films with wurtzite structure and (0 0 2) preferred orientation were deposited on Si(1 0 0) substrate at 550 °C. It is deduced from XRD and XPS measurements that the Sb in the as-grown ZnO:Sb has high oxidation state and dopes in the form of oxygen-rich Sb-O clusters, which results in a large inner stress and a great increase of the c-axis lattice constant. After annealing at 750 °C under vacuum, the c-axis lattice constant of the ZnO:Sb decreases sharply to near the value of ZnO bulk, the electrical properties change from n-type to p-type and the PL intensity ratio of the visible to ultraviolet emission band goes down greatly, as the Sb content increases from 0 to 2.1 at.%. EDS and XRD measurements indicate that some of Sb dopants escape from the ZnO:Sb films and the oxygen-rich Sb-O clusters vanished after the annealing process. The effect of the change in Sb doping behavior on crystal structure, conductivity and PL is discussed in detail.",

keywords = "Magnetron sputtering, Sb-doping, p-type ZnO",

author = "T. Yang and B. Yao and Zhao, {T. T.} and Xing, {G. Z.} and H. Wang and Pan, {H. L.} and R. Deng and Sui, {Y. R.} and Gao, {L. L.} and Wang, {H. Z.} and T. Wu and Shen, {D. Z.}",

note = "Funding Information: This work is supported by the Key Project of National Natural Science Foundation of China under grant no. 50532050 , the “ 973 ” program under grant no. 2006CB604906 , the Innovation Project of Chinese Academy of Sciences , the National Natural Science Foundation of China under grant nos. 6077601 , 60506014 , 10674133 , 60806002 and 10874178 , National Found for Fostering Talents of basic Science under grant no. J0730311 . ",

year = "2011",

month = apr,

day = "28",

doi = "10.1016/j.jallcom.2011.02.080",

language = "English (US)",

volume = "509",

pages = "5426--5430",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

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Yang, T, Yao, B, Zhao, TT, Xing, GZ, Wang, H, Pan, HL, Deng, R, Sui, YR, Gao, LL, Wang, HZ, Wu, T & Shen, DZ 2011, 'Sb doping behavior and its effect on crystal structure, conductivity and photoluminescence of ZnO film in depositing and annealing processes', Journal of Alloys and Compounds, vol. 509, no. 17, pp. 5426-5430. https://doi.org/10.1016/j.jallcom.2011.02.080

TY - JOUR

T1 - Sb doping behavior and its effect on crystal structure, conductivity and photoluminescence of ZnO film in depositing and annealing processes

AU - Yang, T.

AU - Yao, B.

AU - Zhao, T. T.

AU - Xing, G. Z.

AU - Wang, H.

AU - Pan, H. L.

AU - Deng, R.

AU - Sui, Y. R.

AU - Gao, L. L.

AU - Wang, H. Z.

AU - Wu, T.

AU - Shen, D. Z.

N1 - Funding Information: This work is supported by the Key Project of National Natural Science Foundation of China under grant no. 50532050 , the “ 973 ” program under grant no. 2006CB604906 , the Innovation Project of Chinese Academy of Sciences , the National Natural Science Foundation of China under grant nos. 6077601 , 60506014 , 10674133 , 60806002 and 10874178 , National Found for Fostering Talents of basic Science under grant no. J0730311 .

PY - 2011/4/28

Y1 - 2011/4/28

N2 - The Sb-doped ZnO (ZnO:Sb) and undoped ZnO films with wurtzite structure and (0 0 2) preferred orientation were deposited on Si(1 0 0) substrate at 550 °C. It is deduced from XRD and XPS measurements that the Sb in the as-grown ZnO:Sb has high oxidation state and dopes in the form of oxygen-rich Sb-O clusters, which results in a large inner stress and a great increase of the c-axis lattice constant. After annealing at 750 °C under vacuum, the c-axis lattice constant of the ZnO:Sb decreases sharply to near the value of ZnO bulk, the electrical properties change from n-type to p-type and the PL intensity ratio of the visible to ultraviolet emission band goes down greatly, as the Sb content increases from 0 to 2.1 at.%. EDS and XRD measurements indicate that some of Sb dopants escape from the ZnO:Sb films and the oxygen-rich Sb-O clusters vanished after the annealing process. The effect of the change in Sb doping behavior on crystal structure, conductivity and PL is discussed in detail.

AB - The Sb-doped ZnO (ZnO:Sb) and undoped ZnO films with wurtzite structure and (0 0 2) preferred orientation were deposited on Si(1 0 0) substrate at 550 °C. It is deduced from XRD and XPS measurements that the Sb in the as-grown ZnO:Sb has high oxidation state and dopes in the form of oxygen-rich Sb-O clusters, which results in a large inner stress and a great increase of the c-axis lattice constant. After annealing at 750 °C under vacuum, the c-axis lattice constant of the ZnO:Sb decreases sharply to near the value of ZnO bulk, the electrical properties change from n-type to p-type and the PL intensity ratio of the visible to ultraviolet emission band goes down greatly, as the Sb content increases from 0 to 2.1 at.%. EDS and XRD measurements indicate that some of Sb dopants escape from the ZnO:Sb films and the oxygen-rich Sb-O clusters vanished after the annealing process. The effect of the change in Sb doping behavior on crystal structure, conductivity and PL is discussed in detail.

KW - Magnetron sputtering

KW - Sb-doping

KW - p-type ZnO

UR - http://www.scopus.com/inward/record.url?scp=79953178189&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2011.02.080

DO - 10.1016/j.jallcom.2011.02.080

M3 - Article

AN - SCOPUS:79953178189

SN - 0925-8388

VL - 509

SP - 5426

EP - 5430

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 17

ER -

Sb doping behavior and its effect on crystal structure, conductivity and photoluminescence of ZnO film in depositing and annealing processes

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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