Room to high temperature measurements of flexible SOI FinFETs with sub-20-nm fins

Amer El Hajj Diab; Galo T. Sevilla; Sorin Cristoloveanu; Muhammad Mustafa Hussain

doi:10.1109/TED.2014.2360659

Room to high temperature measurements of flexible SOI FinFETs with sub-20-nm fins

Amer El Hajj Diab, Galo T. Sevilla, Sorin Cristoloveanu, Muhammad Mustafa Hussain

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

We report the temperature dependence of the core electrical parameters and transport characteristics of a flexible version of fin field-effect transistor (FinFET) on silicon-on-insulator (SOI) with sub-20-nm wide fins and high-k/metal gate-stacks. For the first time, we characterize them from room to high temperature (150 °C) to show the impact of temperature variation on drain current, gate leakage current, and transconductance. Variation of extracted parameters, such as low-field mobility, subthreshold swing, threshold voltage, and ON-OFF current characteristics, is reported too. Direct comparison is made to a rigid version of the SOI FinFETs. The mobility degradation with temperature is mainly caused by phonon scattering mechanism. The overall excellent devices performance at high temperature after release is outlined proving the suitability of truly high-performance flexible inorganic electronics with such advanced architecture.

Original language	English (US)
Pages (from-to)	3978-3984
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	12
DOIs	https://doi.org/10.1109/TED.2014.2360659
State	Published - Dec 2014

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the King Abdullah University of Science and Technology, Jeddah, Saudi Arabia, through the Office of Competitive Research Funds under Grant CRG-1-2012-HUS-008. The review of this paper was arranged by Editor N. Bhat.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2014.2360659

Cite this

@article{164374b9e70c4a309f4d6d14e80f3d75,

title = "Room to high temperature measurements of flexible SOI FinFETs with sub-20-nm fins",

abstract = "We report the temperature dependence of the core electrical parameters and transport characteristics of a flexible version of fin field-effect transistor (FinFET) on silicon-on-insulator (SOI) with sub-20-nm wide fins and high-k/metal gate-stacks. For the first time, we characterize them from room to high temperature (150 °C) to show the impact of temperature variation on drain current, gate leakage current, and transconductance. Variation of extracted parameters, such as low-field mobility, subthreshold swing, threshold voltage, and ON-OFF current characteristics, is reported too. Direct comparison is made to a rigid version of the SOI FinFETs. The mobility degradation with temperature is mainly caused by phonon scattering mechanism. The overall excellent devices performance at high temperature after release is outlined proving the suitability of truly high-performance flexible inorganic electronics with such advanced architecture.",

author = "Diab, {Amer El Hajj} and Sevilla, {Galo T.} and Sorin Cristoloveanu and Hussain, {Muhammad Mustafa}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the King Abdullah University of Science and Technology, Jeddah, Saudi Arabia, through the Office of Competitive Research Funds under Grant CRG-1-2012-HUS-008. The review of this paper was arranged by Editor N. Bhat.",

year = "2014",

month = dec,

doi = "10.1109/TED.2014.2360659",

language = "English (US)",

volume = "61",

pages = "3978--3984",

journal = "IEEE Transactions on Electron Devices",

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T1 - Room to high temperature measurements of flexible SOI FinFETs with sub-20-nm fins

AU - Diab, Amer El Hajj

AU - Sevilla, Galo T.

AU - Cristoloveanu, Sorin

AU - Hussain, Muhammad Mustafa

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the King Abdullah University of Science and Technology, Jeddah, Saudi Arabia, through the Office of Competitive Research Funds under Grant CRG-1-2012-HUS-008. The review of this paper was arranged by Editor N. Bhat.

PY - 2014/12

Y1 - 2014/12

N2 - We report the temperature dependence of the core electrical parameters and transport characteristics of a flexible version of fin field-effect transistor (FinFET) on silicon-on-insulator (SOI) with sub-20-nm wide fins and high-k/metal gate-stacks. For the first time, we characterize them from room to high temperature (150 °C) to show the impact of temperature variation on drain current, gate leakage current, and transconductance. Variation of extracted parameters, such as low-field mobility, subthreshold swing, threshold voltage, and ON-OFF current characteristics, is reported too. Direct comparison is made to a rigid version of the SOI FinFETs. The mobility degradation with temperature is mainly caused by phonon scattering mechanism. The overall excellent devices performance at high temperature after release is outlined proving the suitability of truly high-performance flexible inorganic electronics with such advanced architecture.

AB - We report the temperature dependence of the core electrical parameters and transport characteristics of a flexible version of fin field-effect transistor (FinFET) on silicon-on-insulator (SOI) with sub-20-nm wide fins and high-k/metal gate-stacks. For the first time, we characterize them from room to high temperature (150 °C) to show the impact of temperature variation on drain current, gate leakage current, and transconductance. Variation of extracted parameters, such as low-field mobility, subthreshold swing, threshold voltage, and ON-OFF current characteristics, is reported too. Direct comparison is made to a rigid version of the SOI FinFETs. The mobility degradation with temperature is mainly caused by phonon scattering mechanism. The overall excellent devices performance at high temperature after release is outlined proving the suitability of truly high-performance flexible inorganic electronics with such advanced architecture.

UR - http://hdl.handle.net/10754/563900

UR - http://ieeexplore.ieee.org/document/6920080/

UR - http://www.scopus.com/inward/record.url?scp=84919497646&partnerID=8YFLogxK

U2 - 10.1109/TED.2014.2360659

DO - 10.1109/TED.2014.2360659

M3 - Article

SN - 0018-9383

VL - 61

SP - 3978

EP - 3984

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -

Room to high temperature measurements of flexible SOI FinFETs with sub-20-nm fins

Abstract

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