Room Temperature Ultralow Threshold GaN Nanowire Polariton Laser

Ayan Das, Junseok Heo, Marc Jankowski, Wei Guo, Lei Zhang, Hui Deng, Pallab Bhattacharya

Research output: Contribution to journalArticlepeer-review

161 Scopus citations

Abstract

We report ultralow threshold polariton lasing from a single GaN nanowire strongly coupled to a large-area dielectric microcavity. The threshold carrier density is 3 orders of magnitude lower than that of photon lasing observed in the same device, and 2 orders of magnitude lower than any existing room-temperature polariton devices. Spectral, polarization, and coherence properties of the emission were measured to confirm polariton lasing. © 2011 American Physical Society.
Original languageEnglish (US)
JournalPhysical Review Letters
Volume107
Issue number6
DOIs
StatePublished - Aug 4 2011
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): N012509-00
Acknowledgements: The work was supported by KAUST under Grant No. N012509-00. L. Z. acknowledges support by the NSF.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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