Abstract
We report ultralow threshold polariton lasing from a single GaN nanowire strongly coupled to a large-area dielectric microcavity. The threshold carrier density is 3 orders of magnitude lower than that of photon lasing observed in the same device, and 2 orders of magnitude lower than any existing room-temperature polariton devices. Spectral, polarization, and coherence properties of the emission were measured to confirm polariton lasing. © 2011 American Physical Society.
Original language | English (US) |
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Journal | Physical Review Letters |
Volume | 107 |
Issue number | 6 |
DOIs | |
State | Published - Aug 4 2011 |
Externally published | Yes |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledged KAUST grant number(s): N012509-00
Acknowledgements: The work was supported by KAUST under Grant No. N012509-00. L. Z. acknowledges support by the NSF.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.