Room-temperature negative differential conductance in carbon nanotubes

Jingqi Li; Qing Zhang

doi:10.1016/j.carbon.2004.10.019

Room-temperature negative differential conductance in carbon nanotubes

Jingqi Li^*, Qing Zhang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

A significant negative differential conductance (NDC) phenomenon of a bundle of single-walled nanotube (SWNT) at room temperature was conducted. Room-temperature negative differential conductance phenomenon was observed in a bundle of SWNT in a CNT based field effect transistor (CNTFET). The room temperature SWNT-NDC could be useful for practical applications of fast switching, oscillator and amplifying devices. It was suggested that the conductance variation of the SWNT and the shift of the energy level in the quantum well were responsible for the peak voltage shifts from 9.2 V to 7.8 with decreasing the gate voltage from 6 V to -6V.

Original language	English (US)
Pages (from-to)	667-670
Number of pages	4
Journal	Carbon
Volume	43
Issue number	3
DOIs	https://doi.org/10.1016/j.carbon.2004.10.019
State	Published - Jan 3 2005

Keywords

A. Carbon nanotubes
D. Electrical (electronic) properties

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)

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10.1016/j.carbon.2004.10.019

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title = "Room-temperature negative differential conductance in carbon nanotubes",

abstract = "A significant negative differential conductance (NDC) phenomenon of a bundle of single-walled nanotube (SWNT) at room temperature was conducted. Room-temperature negative differential conductance phenomenon was observed in a bundle of SWNT in a CNT based field effect transistor (CNTFET). The room temperature SWNT-NDC could be useful for practical applications of fast switching, oscillator and amplifying devices. It was suggested that the conductance variation of the SWNT and the shift of the energy level in the quantum well were responsible for the peak voltage shifts from 9.2 V to 7.8 with decreasing the gate voltage from 6 V to -6V.",

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author = "Jingqi Li and Qing Zhang",

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T1 - Room-temperature negative differential conductance in carbon nanotubes

AU - Li, Jingqi

AU - Zhang, Qing

PY - 2005/1/3

Y1 - 2005/1/3

N2 - A significant negative differential conductance (NDC) phenomenon of a bundle of single-walled nanotube (SWNT) at room temperature was conducted. Room-temperature negative differential conductance phenomenon was observed in a bundle of SWNT in a CNT based field effect transistor (CNTFET). The room temperature SWNT-NDC could be useful for practical applications of fast switching, oscillator and amplifying devices. It was suggested that the conductance variation of the SWNT and the shift of the energy level in the quantum well were responsible for the peak voltage shifts from 9.2 V to 7.8 with decreasing the gate voltage from 6 V to -6V.

AB - A significant negative differential conductance (NDC) phenomenon of a bundle of single-walled nanotube (SWNT) at room temperature was conducted. Room-temperature negative differential conductance phenomenon was observed in a bundle of SWNT in a CNT based field effect transistor (CNTFET). The room temperature SWNT-NDC could be useful for practical applications of fast switching, oscillator and amplifying devices. It was suggested that the conductance variation of the SWNT and the shift of the energy level in the quantum well were responsible for the peak voltage shifts from 9.2 V to 7.8 with decreasing the gate voltage from 6 V to -6V.

KW - A. Carbon nanotubes

KW - D. Electrical (electronic) properties

UR - http://www.scopus.com/inward/record.url?scp=10844234811&partnerID=8YFLogxK

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DO - 10.1016/j.carbon.2004.10.019

M3 - Article

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SN - 0008-6223

VL - 43

SP - 667

EP - 670

JO - Carbon

JF - Carbon

IS - 3

ER -

Room-temperature negative differential conductance in carbon nanotubes

Abstract

Keywords

ASJC Scopus subject areas

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