Room temperature inductively coupled plasma etching of InAs/InSb in BCl 3/Cl 2/Ar

Keyphrases

• Cl 2 100%
• Inductively Coupled Plasma Etching 100%
• InSb 100%
• Process Optimization 25%
• Plasma Power 25%
• Surface Morphology 25%
• Micromasking 25%
• Masking Effect 25%
• Power Processes 25%
• Gas Composition 25%
• Smooth Surface 25%
• Ar Plasma 25%
• Chuck 25%
• Anisotropic Etching 25%
• Inductively Coupled Plasma 25%
• Process Pressure 25%

Engineering

• Room Temperature 100%
• Inductively Coupled Plasma 100%
• Anisotropic 33%
• Masking Effect 33%
• Ar Plasma 33%
• Process Pressure 33%
• Etch Rate 33%
• Optimized Process 33%
• Smooth Surface 33%
• Gas Composition 33%
• Surface Morphology 33%

Material Science

• Plasma Etching 100%
• Surface Morphology 50%
• Anisotropic Etching 50%