Room temperature inductively coupled plasma etching of InAs/InSb in BCl 3/Cl 2/Ar

Jian Sun, Jürgen Kosel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations


Inductively coupled plasma (ICP) etching of InAs and InSb at room temperature has been investigated using BCl 3/Cl 2/Ar plasma. Specifically, the etch rate and post-etching surface morphology were investigated as functions of the gas composition, ICP power, process pressure, and RF chuck power. An optimized process has been developed, yielding anisotropic etching and very smooth surfaces with roughnesses of 0.25 nm for InAs, and 0.57 nm for InSb, which is comparable with the surface of epi-ready polished wafers. The process provides moderate etching rates of 820 /min for InAs and 2800 /min for InSb, and the micro-masking effect is largely avoided. © 2012 Elsevier B.V. All rights reserved.
Original languageEnglish (US)
Title of host publicationMicroelectronic Engineering
PublisherElsevier BV
Number of pages4
StatePublished - Oct 2012

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Condensed Matter Physics


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