Room-temperature fabrication of ultrathin oxide gate dielectrics for low-voltage operation of organic field-effect transistors

Young Min Park, Jürgen Daniel, Martin Heeney, Alberto Salleo

Research output: Contribution to journalArticlepeer-review

138 Scopus citations

Abstract

A high-Î- zirconium oxide gate dielectric is fabricated using a solution-based process at room temperature. UV irradiation decomposes and oxidizes a zirconium-based gel film, which densifies into an ultrathin (
Original languageEnglish (US)
Pages (from-to)971-974
Number of pages4
JournalAdvanced Materials
Volume23
Issue number8
DOIs
StatePublished - Feb 22 2011
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-02-14

ASJC Scopus subject areas

  • Mechanics of Materials
  • General Materials Science
  • Mechanical Engineering

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