Room Temperature CW 1.3 μm Single Mode Lasing of InAs Quantum Dot Micro-disk Lasers Grown on (001) Si

Yating Wan, Qiang Li, Alan Y. Liu, Arthur C. Gossard, John E. Bowers, Evelyn L. Hu, Kei May Lau

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Heteroepitaxially grown InAs quantum dot micro-disk lasers were demonstrated on planar Si (001) substrates. Room-temperature continuous-wave lasing at 1.3 μm with a threshold pump power of 250 μW was achieved for a 4 µm disk.
Original languageEnglish (US)
Title of host publicationOptics InfoBase Conference Papers
PublisherOptica Publishing Group (formerly OSA)
StatePublished - Jan 1 2016
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-18

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