Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser

H. S. Djie, B. S. Ooi, X. M. Fang, Y. Wu, J. M. Fastenau, W. K. Liu, M. Hopkinson

Research output: Contribution to journalArticlepeer-review

72 Scopus citations


We report the first demonstration to our knowledge of an ultrabroad emission laser using InGaAs/GaAs quantum dots by cycled monolayer deposition. The device exhibits a lasing wavelength coverage of ~40 nm at an ~1160 nm center wavelength at room temperature. The broadband signature results from the superposition of quantized lasing states from highly inhomogeneous dots.

Original languageEnglish (US)
Pages (from-to)44-46
Number of pages3
Issue number1
StatePublished - Jan 1 2007
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


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