Room Temperature 1.55 pm Lasing of Sub-wavelength Quantum-dot Lasers Epitaxially Grown on (001) Silicon

Si Zhu; Bei Shi; Qiang Li; Yating Wan; Evelyn L. Hu; Kei May Lau

doi:10.1109/ECOC.2017.8345911

Room Temperature 1.55 pm Lasing of Sub-wavelength Quantum-dot Lasers Epitaxially Grown on (001) Silicon

Si Zhu, Bei Shi, Qiang Li, Yating Wan, Evelyn L. Hu, Kei May Lau

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Sub-wavelength quantum dot microdisk lasers were directly grown on (001) silicon by MOVPE. Lasing in C-band up to 60 °C was achieved with a low RT threshold of 3.7 gW and a high T0 of 130 K.

Original language	English (US)
Title of host publication	European Conference on Optical Communication, ECOC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-3
Number of pages	3
ISBN (Print)	9781538656242
DOIs	https://doi.org/10.1109/ECOC.2017.8345911
State	Published - Sep 21 2017
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2023-09-18

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10.1109/ECOC.2017.8345911

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@inproceedings{36329fa448bb45b68af9eb5f8c00dbf1,

title = "Room Temperature 1.55 pm Lasing of Sub-wavelength Quantum-dot Lasers Epitaxially Grown on (001) Silicon",

abstract = "Sub-wavelength quantum dot microdisk lasers were directly grown on (001) silicon by MOVPE. Lasing in C-band up to 60 °C was achieved with a low RT threshold of 3.7 gW and a high T0 of 130 K.",

author = "Si Zhu and Bei Shi and Qiang Li and Yating Wan and Hu, {Evelyn L.} and Lau, {Kei May}",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-18",

year = "2017",

month = sep,

day = "21",

doi = "10.1109/ECOC.2017.8345911",

language = "English (US)",

isbn = "9781538656242",

pages = "1--3",

booktitle = "European Conference on Optical Communication, ECOC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

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T1 - Room Temperature 1.55 pm Lasing of Sub-wavelength Quantum-dot Lasers Epitaxially Grown on (001) Silicon

AU - Zhu, Si

AU - Shi, Bei

AU - Li, Qiang

AU - Wan, Yating

AU - Hu, Evelyn L.

AU - Lau, Kei May

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2017/9/21

Y1 - 2017/9/21

N2 - Sub-wavelength quantum dot microdisk lasers were directly grown on (001) silicon by MOVPE. Lasing in C-band up to 60 °C was achieved with a low RT threshold of 3.7 gW and a high T0 of 130 K.

AB - Sub-wavelength quantum dot microdisk lasers were directly grown on (001) silicon by MOVPE. Lasing in C-band up to 60 °C was achieved with a low RT threshold of 3.7 gW and a high T0 of 130 K.

UR - https://ieeexplore.ieee.org/document/8345911/

UR - http://www.scopus.com/inward/record.url?scp=85046938572&partnerID=8YFLogxK

U2 - 10.1109/ECOC.2017.8345911

DO - 10.1109/ECOC.2017.8345911

M3 - Conference contribution

SN - 9781538656242

SP - 1

EP - 3

BT - European Conference on Optical Communication, ECOC

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Room Temperature 1.55 pm Lasing of Sub-wavelength Quantum-dot Lasers Epitaxially Grown on (001) Silicon

Abstract

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