Role of nitrogen in the formation of HC-N films by CH4/N 2 barrier discharge plasma: Aliphatic tendency

Abhijit Majumdar; Gobind Das; Kaleswara Rao Basvani; Joachim Heinicke; Rainer Hippler

doi:10.1021/jp906654m

Role of nitrogen in the formation of HC-N films by CH₄/N ₂ barrier discharge plasma: Aliphatic tendency

Abhijit Majumdar^*, Gobind Das, Kaleswara Rao Basvani, Joachim Heinicke, Rainer Hippler

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

We have studied the influence of nitrogen on the chemical properties of the hydrogenated carbon nitride (a-CN_x;:H) film deposited by CH ₄/N₂ dielectric barrier discharge (DBD) plasma. X-ray photoelectron spectroscopy (XPS) indicates that carbon and nitrogen form an unpolarized covalent bond in these C - N_x materials, and the observed chemical shift in the C Is and N Is binding energy is explained with respect to N Is incorporation. Furthermore, the average nitrogen content (N/C ≈ 0.76) in the films was systematically varied by changing the nitrogen partial pressure (CH₄/N₂ ≈ from 5:1 to 1:7) which is well supported by the elemental analysis. Fourier transform infrared (FTIR) absorption spectra exhibit significant changes in different C - N, C≡N, and NH/OH molecular bands at higher nitrogen concentration in the film. The isonitrile and nitrile groups ( - NC and - CN) are increased with the increase of deposition time. In addition, the elemental analysis, proton NMR, and thermolysis mass spectrum show that the composition of the film with the ratio CH₄N₂ ≈ 1:1 is C, 67.68; H, 9.88; N, 16.53 (in wt %) and that the film is composed of polymers, probably containing linear chains which are cleaved off on heating in vacuum.

Original language	English (US)
Pages (from-to)	15734-15741
Number of pages	8
Journal	Journal of Physical Chemistry B
Volume	113
Issue number	48
DOIs	https://doi.org/10.1021/jp906654m
State	Published - Dec 3 2009
Externally published	Yes

ASJC Scopus subject areas

Physical and Theoretical Chemistry
Surfaces, Coatings and Films
Materials Chemistry

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title = "Role of nitrogen in the formation of HC-N films by CH4/N 2 barrier discharge plasma: Aliphatic tendency",

abstract = "We have studied the influence of nitrogen on the chemical properties of the hydrogenated carbon nitride (a-CNx;:H) film deposited by CH 4/N2 dielectric barrier discharge (DBD) plasma. X-ray photoelectron spectroscopy (XPS) indicates that carbon and nitrogen form an unpolarized covalent bond in these C - Nx materials, and the observed chemical shift in the C Is and N Is binding energy is explained with respect to N Is incorporation. Furthermore, the average nitrogen content (N/C ≈ 0.76) in the films was systematically varied by changing the nitrogen partial pressure (CH4/N2 ≈ from 5:1 to 1:7) which is well supported by the elemental analysis. Fourier transform infrared (FTIR) absorption spectra exhibit significant changes in different C - N, C≡N, and NH/OH molecular bands at higher nitrogen concentration in the film. The isonitrile and nitrile groups ( - NC and - CN) are increased with the increase of deposition time. In addition, the elemental analysis, proton NMR, and thermolysis mass spectrum show that the composition of the film with the ratio CH4N2 ≈ 1:1 is C, 67.68; H, 9.88; N, 16.53 (in wt %) and that the film is composed of polymers, probably containing linear chains which are cleaved off on heating in vacuum.",

author = "Abhijit Majumdar and Gobind Das and Basvani, {Kaleswara Rao} and Joachim Heinicke and Rainer Hippler",

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T1 - Role of nitrogen in the formation of HC-N films by CH4/N 2 barrier discharge plasma

T2 - Aliphatic tendency

AU - Majumdar, Abhijit

AU - Das, Gobind

AU - Basvani, Kaleswara Rao

AU - Heinicke, Joachim

AU - Hippler, Rainer

PY - 2009/12/3

Y1 - 2009/12/3

N2 - We have studied the influence of nitrogen on the chemical properties of the hydrogenated carbon nitride (a-CNx;:H) film deposited by CH 4/N2 dielectric barrier discharge (DBD) plasma. X-ray photoelectron spectroscopy (XPS) indicates that carbon and nitrogen form an unpolarized covalent bond in these C - Nx materials, and the observed chemical shift in the C Is and N Is binding energy is explained with respect to N Is incorporation. Furthermore, the average nitrogen content (N/C ≈ 0.76) in the films was systematically varied by changing the nitrogen partial pressure (CH4/N2 ≈ from 5:1 to 1:7) which is well supported by the elemental analysis. Fourier transform infrared (FTIR) absorption spectra exhibit significant changes in different C - N, C≡N, and NH/OH molecular bands at higher nitrogen concentration in the film. The isonitrile and nitrile groups ( - NC and - CN) are increased with the increase of deposition time. In addition, the elemental analysis, proton NMR, and thermolysis mass spectrum show that the composition of the film with the ratio CH4N2 ≈ 1:1 is C, 67.68; H, 9.88; N, 16.53 (in wt %) and that the film is composed of polymers, probably containing linear chains which are cleaved off on heating in vacuum.

AB - We have studied the influence of nitrogen on the chemical properties of the hydrogenated carbon nitride (a-CNx;:H) film deposited by CH 4/N2 dielectric barrier discharge (DBD) plasma. X-ray photoelectron spectroscopy (XPS) indicates that carbon and nitrogen form an unpolarized covalent bond in these C - Nx materials, and the observed chemical shift in the C Is and N Is binding energy is explained with respect to N Is incorporation. Furthermore, the average nitrogen content (N/C ≈ 0.76) in the films was systematically varied by changing the nitrogen partial pressure (CH4/N2 ≈ from 5:1 to 1:7) which is well supported by the elemental analysis. Fourier transform infrared (FTIR) absorption spectra exhibit significant changes in different C - N, C≡N, and NH/OH molecular bands at higher nitrogen concentration in the film. The isonitrile and nitrile groups ( - NC and - CN) are increased with the increase of deposition time. In addition, the elemental analysis, proton NMR, and thermolysis mass spectrum show that the composition of the film with the ratio CH4N2 ≈ 1:1 is C, 67.68; H, 9.88; N, 16.53 (in wt %) and that the film is composed of polymers, probably containing linear chains which are cleaved off on heating in vacuum.

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Role of nitrogen in the formation of HC-N films by CH₄/N ₂ barrier discharge plasma: Aliphatic tendency

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