Role of interaction forces in controlling the stability and polishing performance of CMP slurries

Engineering

• Chemical Mechanical Polishing 100%
• Microelectronics 40%
• Polishing Slurry 40%
• Polishing Process 40%
• Performance 40%
• Stability 40%
• Silicon Dioxide 40%
• Planarization 20%
• Material Removal Rate 20%
• Surface Defect 20%
• Processing Condition 20%
• Mechanical Interaction 20%
• Interaction Force 20%
• High Ionic Strength 20%
• Slurry Stability 20%
• Design 20%
• Properties 20%
• Engineering 20%
• Substrates 20%
• Requirements 20%
• Abrasive Particle 20%

Material Science

• Particle 80%
• Multilayers 40%
• Device Fabrication 20%
• Dielectric Material 20%
• Surface Active Agent 20%
• Surface Defect 20%
• Metal 20%
• Slurry 20%