Doping serves as a vital strategy for tuning electronic and optoelectronic properties of semiconductors. Compared to organic semiconductors, the understanding and optimization of the doping process in halide perovskite semiconductors is still in its infancy. Nonetheless, there is a continuous surge in doping these semiconductors for performance enhancement. This perspective discusses the central role of dopants in organic and halide perovskite-based semiconductors used for energy conversion devices, particularly solar cells and thermoelectrics. We summarize various p- and n-type dopants explored for modifying the active layer in organic and perovskite devices, highlighting their challenges and limitations. Understanding doping-induced changes in electronic properties and their ramifications on device performance is essential for improving the device performance.
Bibliographical noteKAUST Repository Item: Exported on 2021-10-26
Acknowledged KAUST grant number(s): OSR-CRG2018-3737
Acknowledgements: This publication is supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-CRG2018-3737.
ASJC Scopus subject areas
- Materials Chemistry
- Chemical Engineering(all)