Role of donor-acceptor complexes and impurity band in stabilizing ferromagnetic order in Cu-doped SnO 2 thin films

Yongfeng Li; Rui Deng; Yufeng Tian; Bin Yao; Tom Wu

doi:10.1063/1.4705419

Role of donor-acceptor complexes and impurity band in stabilizing ferromagnetic order in Cu-doped SnO ₂ thin films

Yongfeng Li^*, Rui Deng, Yufeng Tian, Bin Yao, Tom Wu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

89 Scopus citations

Abstract

Our complementary magnetic and photoluminescence measurements reveal the correlation between the donor-acceptor complex and the ferromagnetic order in Cu-doped SnO ₂ thin films. Oxygen vacancies (V _O) and Cu dopants form defect complexes of donor-acceptor pairs, and the associated spin-polarized impurity band leads to the narrowing of bandgap. Electronic structure calculations based on the first-principles method demonstrate that the Cu-V _O complex has low formation energy and can stabilize the ferromagnetic coupling. Our results suggest that intrinsic defects and their complexes with dopants play a key role for establishing the ferromagnetic order in doped wide-bandgap oxides.

Original language	English (US)
Article number	172402
Journal	Applied Physics Letters
Volume	100
Issue number	17
DOIs	https://doi.org/10.1063/1.4705419
State	Published - Apr 23 2012
Externally published	Yes

Bibliographical note

Funding Information:
We acknowledge the supports from the Singapore National Research Foundation.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4705419

Cite this

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title = "Role of donor-acceptor complexes and impurity band in stabilizing ferromagnetic order in Cu-doped SnO 2 thin films",

abstract = "Our complementary magnetic and photoluminescence measurements reveal the correlation between the donor-acceptor complex and the ferromagnetic order in Cu-doped SnO 2 thin films. Oxygen vacancies (V O) and Cu dopants form defect complexes of donor-acceptor pairs, and the associated spin-polarized impurity band leads to the narrowing of bandgap. Electronic structure calculations based on the first-principles method demonstrate that the Cu-V O complex has low formation energy and can stabilize the ferromagnetic coupling. Our results suggest that intrinsic defects and their complexes with dopants play a key role for establishing the ferromagnetic order in doped wide-bandgap oxides.",

author = "Yongfeng Li and Rui Deng and Yufeng Tian and Bin Yao and Tom Wu",

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T1 - Role of donor-acceptor complexes and impurity band in stabilizing ferromagnetic order in Cu-doped SnO 2 thin films

AU - Li, Yongfeng

AU - Deng, Rui

AU - Tian, Yufeng

AU - Yao, Bin

AU - Wu, Tom

N1 - Funding Information: We acknowledge the supports from the Singapore National Research Foundation.

PY - 2012/4/23

Y1 - 2012/4/23

N2 - Our complementary magnetic and photoluminescence measurements reveal the correlation between the donor-acceptor complex and the ferromagnetic order in Cu-doped SnO 2 thin films. Oxygen vacancies (V O) and Cu dopants form defect complexes of donor-acceptor pairs, and the associated spin-polarized impurity band leads to the narrowing of bandgap. Electronic structure calculations based on the first-principles method demonstrate that the Cu-V O complex has low formation energy and can stabilize the ferromagnetic coupling. Our results suggest that intrinsic defects and their complexes with dopants play a key role for establishing the ferromagnetic order in doped wide-bandgap oxides.

AB - Our complementary magnetic and photoluminescence measurements reveal the correlation between the donor-acceptor complex and the ferromagnetic order in Cu-doped SnO 2 thin films. Oxygen vacancies (V O) and Cu dopants form defect complexes of donor-acceptor pairs, and the associated spin-polarized impurity band leads to the narrowing of bandgap. Electronic structure calculations based on the first-principles method demonstrate that the Cu-V O complex has low formation energy and can stabilize the ferromagnetic coupling. Our results suggest that intrinsic defects and their complexes with dopants play a key role for establishing the ferromagnetic order in doped wide-bandgap oxides.

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