Our complementary magnetic and photoluminescence measurements reveal the correlation between the donor-acceptor complex and the ferromagnetic order in Cu-doped SnO 2 thin films. Oxygen vacancies (V O) and Cu dopants form defect complexes of donor-acceptor pairs, and the associated spin-polarized impurity band leads to the narrowing of bandgap. Electronic structure calculations based on the first-principles method demonstrate that the Cu-V O complex has low formation energy and can stabilize the ferromagnetic coupling. Our results suggest that intrinsic defects and their complexes with dopants play a key role for establishing the ferromagnetic order in doped wide-bandgap oxides.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Apr 23 2012|
Bibliographical noteFunding Information:
We acknowledge the supports from the Singapore National Research Foundation.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)