Role of biexciton state in excitonic resonant nonlinearity in homoepitaxial ZnSe

T. Saiki; M. Kuwata-Gonokami; K. Ohkawa; T. Mitsuyu

doi:10.1016/0038-1098(95)00346-0

Role of biexciton state in excitonic resonant nonlinearity in homoepitaxial ZnSe

T. Saiki, M. Kuwata-Gonokami^*, K. Ohkawa, T. Mitsuyu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

With a high quality strain free ZnSe sample, the biexciton states are studied at 10K. The delay time dependences, spectral responses of the two-pulse four- wave mixing signal are examined in two polarization configurations. In orthogonal polarization configuration, biexciton two-photon resonance is clearly observed. The observed binding energy is 4 meV which is also confirmed by the nonlinear emission spectra associated with the biexciton destruction. The polarization dependences of the four-wave mixing signal are found to be a powerful tool to examine the biexciton contribution near the exciton resonance.

Original language	English (US)
Pages (from-to)	679-683
Number of pages	5
Journal	Solid State Communications
Volume	95
Issue number	10
DOIs	https://doi.org/10.1016/0038-1098(95)00346-0
State	Published - Sep 1995
Externally published	Yes

Keywords

A. semiconductors
B. epitaxy
D. optical properties
E. luminescence
E. nonlinear optics

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/0038-1098(95)00346-0

Cite this

@article{fb72af34729240d185da1cd3495e9a3d,

title = "Role of biexciton state in excitonic resonant nonlinearity in homoepitaxial ZnSe",

abstract = "With a high quality strain free ZnSe sample, the biexciton states are studied at 10K. The delay time dependences, spectral responses of the two-pulse four- wave mixing signal are examined in two polarization configurations. In orthogonal polarization configuration, biexciton two-photon resonance is clearly observed. The observed binding energy is 4 meV which is also confirmed by the nonlinear emission spectra associated with the biexciton destruction. The polarization dependences of the four-wave mixing signal are found to be a powerful tool to examine the biexciton contribution near the exciton resonance.",

keywords = "A. semiconductors, B. epitaxy, D. optical properties, E. luminescence, E. nonlinear optics",

author = "T. Saiki and M. Kuwata-Gonokami and K. Ohkawa and T. Mitsuyu",

year = "1995",

month = sep,

doi = "10.1016/0038-1098(95)00346-0",

language = "English (US)",

volume = "95",

pages = "679--683",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "10",

}

TY - JOUR

T1 - Role of biexciton state in excitonic resonant nonlinearity in homoepitaxial ZnSe

AU - Saiki, T.

AU - Kuwata-Gonokami, M.

AU - Ohkawa, K.

AU - Mitsuyu, T.

PY - 1995/9

Y1 - 1995/9

N2 - With a high quality strain free ZnSe sample, the biexciton states are studied at 10K. The delay time dependences, spectral responses of the two-pulse four- wave mixing signal are examined in two polarization configurations. In orthogonal polarization configuration, biexciton two-photon resonance is clearly observed. The observed binding energy is 4 meV which is also confirmed by the nonlinear emission spectra associated with the biexciton destruction. The polarization dependences of the four-wave mixing signal are found to be a powerful tool to examine the biexciton contribution near the exciton resonance.

AB - With a high quality strain free ZnSe sample, the biexciton states are studied at 10K. The delay time dependences, spectral responses of the two-pulse four- wave mixing signal are examined in two polarization configurations. In orthogonal polarization configuration, biexciton two-photon resonance is clearly observed. The observed binding energy is 4 meV which is also confirmed by the nonlinear emission spectra associated with the biexciton destruction. The polarization dependences of the four-wave mixing signal are found to be a powerful tool to examine the biexciton contribution near the exciton resonance.

KW - A. semiconductors

KW - B. epitaxy

KW - D. optical properties

KW - E. luminescence

KW - E. nonlinear optics

UR - http://www.scopus.com/inward/record.url?scp=0029379031&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(95)00346-0

DO - 10.1016/0038-1098(95)00346-0

M3 - Article

AN - SCOPUS:0029379031

SN - 0038-1098

VL - 95

SP - 679

EP - 683

JO - Solid State Communications

JF - Solid State Communications

IS - 10

ER -

Role of biexciton state in excitonic resonant nonlinearity in homoepitaxial ZnSe

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this