Role of band states and trap states in the electrical properties of organic semiconductors: Hopping versus mobility edge model

Shafigh Mehraeen*, Veaceslav Coropceanu, Jean-Luc Bredas

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

50 Scopus citations

Abstract

We compare the merits of a hopping model and a mobility edge model in the description of the effect of charge-carrier concentration on the electrical conductivity, carrier mobility, and Fermi energy of organic semiconductors. We consider the case of a composite electronic density of states (DOS) that consists of a superposition of a Gaussian DOS and an exponential DOS. Using kinetic Monte Carlo simulations, we apply the two models in order to interpret the recent experimental data reported for n-doped C60 films. While both models are capable of reproducing the experimental data very well and yield qualitatively similar characteristic parameters for the density of states, some discrepancies are found at the quantitative level.

Original languageEnglish (US)
Article number195209
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume87
Issue number19
DOIs
StatePublished - May 28 2013
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): KUS-C1-015-21
Acknowledgements: We thank Antoine Kahn and Selina Olthof for many fruitful discussions. This work has been supported by the King Abdullah University of Science and Technology (KAUST), Award No. KUS-C1-015-21, in the framework of the Center for Advanced Molecular Photovoltaics (CAMP). Computational resources have been provided by the CRIF Program of the National Science Foundation under Award CHE-0946869.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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