Robust spin torque switching of noncollinear antiferromagnet Mn3Sn

Teng Xu; Hao Bai; Yiqing Dong; Le Zhao; Heng-An Zhou; Junwei Zhang; Xixiang Zhang; Wanjun Jiang

doi:10.1063/5.0156266

Robust spin torque switching of noncollinear antiferromagnet Mn3Sn

Teng Xu, Hao Bai, Yiqing Dong, Le Zhao, Heng-An Zhou, Junwei Zhang, Xixiang Zhang, Wanjun Jiang

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Electrical switching of topological antiferromagnetic states in Mn3Sn thin films has been a subject of active investigation. However, dependences of switching behaviors on the film thickness, external field, and crystal orientation remain to be fully explored, which motivate the present study. In this work, (112̄0)-orientated Mn3Sn thin films are fabricated on sapphire substrates, in which a large anomalous Hall effect over a wide temperature range (270–400 K) can be identified. The current-induced spin–orbit torques (SOTs) are utilized to electrically manipulate the topological antiferromagnetic states in Mn3Sn/Pt bilayers. The robust SOT switching can be realized in Mn3Sn films with thicknesses up to 100 nm and with in-plane fields up to 1200 mT. Furthermore, SOT switching behaviors that are independent of the choice of crystal orientations are clearly revealed. Our results could be useful for implementing Mn3Sn films for efficient and stable antiferromagnetic spintronics.

Original language	English (US)
Journal	APL MATERIALS
Volume	11
Issue number	7
DOIs	https://doi.org/10.1063/5.0156266
State	Published - Jul 17 2023

Bibliographical note

KAUST Repository Item: Exported on 2023-07-20
Acknowledgements: The work carried out at Tsinghua University was supported by the National Key R&D Program of China (Grant No. 2022YFA1405100), National Natural Science Foundation of China (NSFC Grant Nos. 52271181 and 51831005), Basic Science Center Project of NSFC (Grant No. 51788104), NSF for Distinguished Young Scholars (Grant No. 12225409), Beijing Natural Science Foundation (Grant No. Z190009), and Beijing Advanced Innovation Center for Future Chip (ICFC).

ASJC Scopus subject areas

General Engineering
General Materials Science

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10.1063/5.0156266

https://repository.kaust.edu.sa/bitstream/10754/693112/1/071116_1_5.0156266_removed.pdf

Cite this

@article{923edd6671794b7d9f778321ff99b0c3,

title = "Robust spin torque switching of noncollinear antiferromagnet Mn3Sn",

abstract = "Electrical switching of topological antiferromagnetic states in Mn3Sn thin films has been a subject of active investigation. However, dependences of switching behaviors on the film thickness, external field, and crystal orientation remain to be fully explored, which motivate the present study. In this work, (11{\=2}0)-orientated Mn3Sn thin films are fabricated on sapphire substrates, in which a large anomalous Hall effect over a wide temperature range (270–400 K) can be identified. The current-induced spin–orbit torques (SOTs) are utilized to electrically manipulate the topological antiferromagnetic states in Mn3Sn/Pt bilayers. The robust SOT switching can be realized in Mn3Sn films with thicknesses up to 100 nm and with in-plane fields up to 1200 mT. Furthermore, SOT switching behaviors that are independent of the choice of crystal orientations are clearly revealed. Our results could be useful for implementing Mn3Sn films for efficient and stable antiferromagnetic spintronics.",

author = "Teng Xu and Hao Bai and Yiqing Dong and Le Zhao and Heng-An Zhou and Junwei Zhang and Xixiang Zhang and Wanjun Jiang",

note = "KAUST Repository Item: Exported on 2023-07-20 Acknowledgements: The work carried out at Tsinghua University was supported by the National Key R&D Program of China (Grant No. 2022YFA1405100), National Natural Science Foundation of China (NSFC Grant Nos. 52271181 and 51831005), Basic Science Center Project of NSFC (Grant No. 51788104), NSF for Distinguished Young Scholars (Grant No. 12225409), Beijing Natural Science Foundation (Grant No. Z190009), and Beijing Advanced Innovation Center for Future Chip (ICFC).",

year = "2023",

month = jul,

day = "17",

doi = "10.1063/5.0156266",

language = "English (US)",

volume = "11",

journal = "APL MATERIALS",

issn = "2166-532X",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Robust spin torque switching of noncollinear antiferromagnet Mn3Sn

AU - Xu, Teng

AU - Bai, Hao

AU - Dong, Yiqing

AU - Zhao, Le

AU - Zhou, Heng-An

AU - Zhang, Junwei

AU - Zhang, Xixiang

AU - Jiang, Wanjun

N1 - KAUST Repository Item: Exported on 2023-07-20 Acknowledgements: The work carried out at Tsinghua University was supported by the National Key R&D Program of China (Grant No. 2022YFA1405100), National Natural Science Foundation of China (NSFC Grant Nos. 52271181 and 51831005), Basic Science Center Project of NSFC (Grant No. 51788104), NSF for Distinguished Young Scholars (Grant No. 12225409), Beijing Natural Science Foundation (Grant No. Z190009), and Beijing Advanced Innovation Center for Future Chip (ICFC).

PY - 2023/7/17

Y1 - 2023/7/17

N2 - Electrical switching of topological antiferromagnetic states in Mn3Sn thin films has been a subject of active investigation. However, dependences of switching behaviors on the film thickness, external field, and crystal orientation remain to be fully explored, which motivate the present study. In this work, (112̄0)-orientated Mn3Sn thin films are fabricated on sapphire substrates, in which a large anomalous Hall effect over a wide temperature range (270–400 K) can be identified. The current-induced spin–orbit torques (SOTs) are utilized to electrically manipulate the topological antiferromagnetic states in Mn3Sn/Pt bilayers. The robust SOT switching can be realized in Mn3Sn films with thicknesses up to 100 nm and with in-plane fields up to 1200 mT. Furthermore, SOT switching behaviors that are independent of the choice of crystal orientations are clearly revealed. Our results could be useful for implementing Mn3Sn films for efficient and stable antiferromagnetic spintronics.

AB - Electrical switching of topological antiferromagnetic states in Mn3Sn thin films has been a subject of active investigation. However, dependences of switching behaviors on the film thickness, external field, and crystal orientation remain to be fully explored, which motivate the present study. In this work, (112̄0)-orientated Mn3Sn thin films are fabricated on sapphire substrates, in which a large anomalous Hall effect over a wide temperature range (270–400 K) can be identified. The current-induced spin–orbit torques (SOTs) are utilized to electrically manipulate the topological antiferromagnetic states in Mn3Sn/Pt bilayers. The robust SOT switching can be realized in Mn3Sn films with thicknesses up to 100 nm and with in-plane fields up to 1200 mT. Furthermore, SOT switching behaviors that are independent of the choice of crystal orientations are clearly revealed. Our results could be useful for implementing Mn3Sn films for efficient and stable antiferromagnetic spintronics.

UR - http://hdl.handle.net/10754/693112

UR - https://pubs.aip.org/apm/article/11/7/071116/2902659/Robust-spin-torque-switching-of-noncollinear

U2 - 10.1063/5.0156266

DO - 10.1063/5.0156266

M3 - Article

SN - 2166-532X

VL - 11

JO - APL MATERIALS

JF - APL MATERIALS

IS - 7

ER -

Robust spin torque switching of noncollinear antiferromagnet Mn3Sn

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