Electrical switching of topological antiferromagnetic states in Mn3Sn thin films has been a subject of active investigation. However, dependences of switching behaviors on the film thickness, external field, and crystal orientation remain to be fully explored, which motivate the present study. In this work, (112̄0)-orientated Mn3Sn thin films are fabricated on sapphire substrates, in which a large anomalous Hall effect over a wide temperature range (270–400 K) can be identified. The current-induced spin–orbit torques (SOTs) are utilized to electrically manipulate the topological antiferromagnetic states in Mn3Sn/Pt bilayers. The robust SOT switching can be realized in Mn3Sn films with thicknesses up to 100 nm and with in-plane fields up to 1200 mT. Furthermore, SOT switching behaviors that are independent of the choice of crystal orientations are clearly revealed. Our results could be useful for implementing Mn3Sn films for efficient and stable antiferromagnetic spintronics.
Bibliographical noteKAUST Repository Item: Exported on 2023-07-20
Acknowledgements: The work carried out at Tsinghua University was supported by the National Key R&D Program of China (Grant No. 2022YFA1405100), National Natural Science Foundation of China (NSFC Grant Nos. 52271181 and 51831005), Basic Science Center Project of NSFC (Grant No. 51788104), NSF for Distinguished Young Scholars (Grant No. 12225409), Beijing Natural Science Foundation (Grant No. Z190009), and Beijing Advanced Innovation Center for Future Chip (ICFC).
ASJC Scopus subject areas
- Materials Science(all)