RGB monolithic GaInN-based μLED arrays connected via tunnel junctions

Tatsunari Saito, Naoki Hasegawa, Keigo Imura, Yoshinobu Suehiro, Tetsuya Takeuchi, Satoshi KAMIYAMA, Daisuke Iida, Kazuhiro Ohkawa, Motoaki Iwaya

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


We report a 330 ppi monolithic RGB μLED (ultra-compact light-emitting diode) array of blue, green and red GaInN-based LEDs stacked on the same wafer. Considering it is challenging to form ohmic electrodes on the plasma-etched p-type GaN surface, GaInN-based tunnel junctions were used to connect each LED, and anode electrodes for the blue and green LEDs were formed on n-type GaN. The fabricated stacked monolithic μLED arrays were tested at room temperature (approximately 26°C) and DC. Each μLED emitted blue, green and red with peak wavelengths of 486, 514 and 604 nm at a current density of 50 A/cm2.
Original languageEnglish (US)
StatePublished - Aug 4 2023

Bibliographical note

KAUST Repository Item: Exported on 2023-08-07
Acknowledged KAUST grant number(s): ORA-2022-5313, BAS/1/1676- 01-01
Acknowledgements: This study was partially supported by JSPS KAKENHI (22H00304), NEDO Feasibility Study Programme, JST A-STEP Project (JPMJTR201D) and King Abdullah University of Science and Technology (KAUST) Research Funding (KRF) (Award Nos. ORA-2022-5313 and BAS/1/1676- 01-01).

ASJC Scopus subject areas

  • General Physics and Astronomy
  • General Engineering


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