Abstract
We report a 330 ppi monolithic RGB μLED (ultra-compact light-emitting diode) array of blue, green and red GaInN-based LEDs stacked on the same wafer. Considering it is challenging to form ohmic electrodes on the plasma-etched p-type GaN surface, GaInN-based tunnel junctions were used to connect each LED, and anode electrodes for the blue and green LEDs were formed on n-type GaN. The fabricated stacked monolithic μLED arrays were tested at room temperature (approximately 26°C) and DC. Each μLED emitted blue, green and red with peak wavelengths of 486, 514 and 604 nm at a current density of 50 A/cm2.
Original language | English (US) |
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Journal | APPLIED PHYSICS EXPRESS |
DOIs | |
State | Published - Aug 4 2023 |
Bibliographical note
KAUST Repository Item: Exported on 2023-08-07Acknowledged KAUST grant number(s): ORA-2022-5313, BAS/1/1676- 01-01
Acknowledgements: This study was partially supported by JSPS KAKENHI (22H00304), NEDO Feasibility Study Programme, JST A-STEP Project (JPMJTR201D) and King Abdullah University of Science and Technology (KAUST) Research Funding (KRF) (Award Nos. ORA-2022-5313 and BAS/1/1676- 01-01).
ASJC Scopus subject areas
- General Physics and Astronomy
- General Engineering