In this work, we have presented, a radio frequency (RF) assessment of nanoscale gallium nitride-silicon-on-insulator fin field-effect transistor (GaN-SOI-FinFET). All the performances of the device have been compared with conventional FinFET (Conv. FinFET) simultaneously. All the results show that the power gains have significantly improved in terms of Gma, Gms, stern stability factor (SS), GMT, and intrinsic delay in comparison to conventional FinFET. Current gain unilateral power gain and have also been evaluated for the extraction of fT (cut-off frequency) and fMAX respectively. fT and fMAX enhance by 88.8% and 94.6% respectively. This analysis has been done at several THz frequencies. The implementation of GaN in the channel reduces the parasitic capacitance and paves the way for high-performance RF applications.
|Original language||English (US)|
|Title of host publication||2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO)|
|State||Published - Jul 18 2022|
Bibliographical noteKAUST Repository Item: Exported on 2022-12-26
Acknowledgements: This work is supported by Institute Research and Development Project Scheme (IRDPS), Project ID: RD ECE-02 to A. Kumar. We are are thankful to JIIT for providing the support under Institute Research and Development Project Scheme (IRDPS), Project ID: RD ECE-02.