RF Performance Assessment of Sub-8nm GaN-SOI-FinFET Using Power Gain Parameters

Ajay Kumar; Neha Gupta; Amit K. Goyal; Yehia Mahmoud Massoud

doi:10.1109/5NANO53044.2022.9828977

RF Performance Assessment of Sub-8nm GaN-SOI-FinFET Using Power Gain Parameters

Ajay Kumar, Neha Gupta, Amit K. Goyal, Yehia Mahmoud Massoud

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

In this work, we have presented, a radio frequency (RF) assessment of nanoscale gallium nitride-silicon-on-insulator fin field-effect transistor (GaN-SOI-FinFET). All the performances of the device have been compared with conventional FinFET (Conv. FinFET) simultaneously. All the results show that the power gains have significantly improved in terms of Gma, Gms, stern stability factor (SS), GMT, and intrinsic delay in comparison to conventional FinFET. Current gain unilateral power gain and have also been evaluated for the extraction of fT (cut-off frequency) and fMAX respectively. fT and fMAX enhance by 88.8% and 94.6% respectively. This analysis has been done at several THz frequencies. The implementation of GaN in the channel reduces the parasitic capacitance and paves the way for high-performance RF applications.

Original language	English (US)
Title of host publication	2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO)
Publisher	IEEE
ISBN (Print)	978-1-6654-3729-5
DOIs	https://doi.org/10.1109/5NANO53044.2022.9828977
State	Published - Jul 18 2022

Bibliographical note

KAUST Repository Item: Exported on 2022-12-26
Acknowledgements: This work is supported by Institute Research and Development Project Scheme (IRDPS), Project ID: RD ECE-02 to A. Kumar. We are are thankful to JIIT for providing the support under Institute Research and Development Project Scheme (IRDPS), Project ID: RD ECE-02.

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https://repository.kaust.edu.sa/bitstream/10754/679935/1/5NANO_2022_paper_117.pdf

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@inproceedings{f92d881c0309422089a5350983b66d14,

title = "RF Performance Assessment of Sub-8nm GaN-SOI-FinFET Using Power Gain Parameters",

abstract = "In this work, we have presented, a radio frequency (RF) assessment of nanoscale gallium nitride-silicon-on-insulator fin field-effect transistor (GaN-SOI-FinFET). All the performances of the device have been compared with conventional FinFET (Conv. FinFET) simultaneously. All the results show that the power gains have significantly improved in terms of Gma, Gms, stern stability factor (SS), GMT, and intrinsic delay in comparison to conventional FinFET. Current gain unilateral power gain and have also been evaluated for the extraction of fT (cut-off frequency) and fMAX respectively. fT and fMAX enhance by 88.8% and 94.6% respectively. This analysis has been done at several THz frequencies. The implementation of GaN in the channel reduces the parasitic capacitance and paves the way for high-performance RF applications.",

author = "Ajay Kumar and Neha Gupta and Goyal, {Amit K.} and Massoud, {Yehia Mahmoud}",

note = "KAUST Repository Item: Exported on 2022-12-26 Acknowledgements: This work is supported by Institute Research and Development Project Scheme (IRDPS), Project ID: RD ECE-02 to A. Kumar. We are are thankful to JIIT for providing the support under Institute Research and Development Project Scheme (IRDPS), Project ID: RD ECE-02.",

year = "2022",

month = jul,

day = "18",

doi = "10.1109/5NANO53044.2022.9828977",

language = "English (US)",

isbn = "978-1-6654-3729-5",

booktitle = "2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO)",

publisher = "IEEE",

}

TY - GEN

T1 - RF Performance Assessment of Sub-8nm GaN-SOI-FinFET Using Power Gain Parameters

AU - Kumar, Ajay

AU - Gupta, Neha

AU - Goyal, Amit K.

AU - Massoud, Yehia Mahmoud

N1 - KAUST Repository Item: Exported on 2022-12-26 Acknowledgements: This work is supported by Institute Research and Development Project Scheme (IRDPS), Project ID: RD ECE-02 to A. Kumar. We are are thankful to JIIT for providing the support under Institute Research and Development Project Scheme (IRDPS), Project ID: RD ECE-02.

PY - 2022/7/18

Y1 - 2022/7/18

N2 - In this work, we have presented, a radio frequency (RF) assessment of nanoscale gallium nitride-silicon-on-insulator fin field-effect transistor (GaN-SOI-FinFET). All the performances of the device have been compared with conventional FinFET (Conv. FinFET) simultaneously. All the results show that the power gains have significantly improved in terms of Gma, Gms, stern stability factor (SS), GMT, and intrinsic delay in comparison to conventional FinFET. Current gain unilateral power gain and have also been evaluated for the extraction of fT (cut-off frequency) and fMAX respectively. fT and fMAX enhance by 88.8% and 94.6% respectively. This analysis has been done at several THz frequencies. The implementation of GaN in the channel reduces the parasitic capacitance and paves the way for high-performance RF applications.

AB - In this work, we have presented, a radio frequency (RF) assessment of nanoscale gallium nitride-silicon-on-insulator fin field-effect transistor (GaN-SOI-FinFET). All the performances of the device have been compared with conventional FinFET (Conv. FinFET) simultaneously. All the results show that the power gains have significantly improved in terms of Gma, Gms, stern stability factor (SS), GMT, and intrinsic delay in comparison to conventional FinFET. Current gain unilateral power gain and have also been evaluated for the extraction of fT (cut-off frequency) and fMAX respectively. fT and fMAX enhance by 88.8% and 94.6% respectively. This analysis has been done at several THz frequencies. The implementation of GaN in the channel reduces the parasitic capacitance and paves the way for high-performance RF applications.

UR - http://hdl.handle.net/10754/679935

UR - https://ieeexplore.ieee.org/document/9828977/

UR - http://www.scopus.com/inward/record.url?scp=85135876835&partnerID=8YFLogxK

U2 - 10.1109/5NANO53044.2022.9828977

DO - 10.1109/5NANO53044.2022.9828977

M3 - Conference contribution

SN - 978-1-6654-3729-5

BT - 2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO)

PB - IEEE

ER -

RF Performance Assessment of Sub-8nm GaN-SOI-FinFET Using Power Gain Parameters

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