Metal halide perovskites have rapidly enabled a range of high-performance photovoltaic technologies. However, catastrophic failure under reverse voltage bias poses a roadblock for their commercialization. In this work, we conduct a series of stress tests to compare the reverse-bias stability of perovskite single-junction, silicon single-junction, and monolithic perovskite/silicon tandem solar cells. We demonstrate that the tested perovskite/silicon tandem devices are considerably more resilient against reverse bias compared with perovskite single-junction devices. The origin of such improved stability stems from the low reverse-bias diode current of the silicon subcell. This translates to dropping most of the voltage over the silicon subcell, where such a favorable voltage distribution protects the perovskite subcell from reverse-bias-induced degradation. These results highlight that, compared with other perovskite technologies, monolithic perovskite/silicon tandems are at a higher technology readiness level in terms of tackling the reverse bias and partial shading challenges, which is a considerable advantage toward commercialization.
Bibliographical noteKAUST Repository Item: Exported on 2023-09-08
Acknowledged KAUST grant number(s): OSR-CARF/CCF-3079, OSR-CRG2020-4350, OSR-CRG2022-5035
Acknowledgements: We acknowledge funding for this work by KAUST under contract numbers OSR-CRG2022-5035, OSR-CRG2020-4350, and OSR-CARF/CCF-3079. This work was authored in part by the National Renewable Energy Laboratory (NREL), operated by Alliance for Sustainable Energy, LLC, for the US Department of Energy (DOE) under contract no. DE-AC36-08GO28308. Funding for R.A.K. was provided by NREL’s Laboratory Directed Research and Development (LDRD) program. The views expressed in the article do not necessarily represent the views of the DOE or the US Government.