We report on the carrier dynamic and electronic structure investigations on AlGaN-based deep-ultraviolet multiple quantum wells (MQWs) with lateral polarity domains. The localized potential maximum is predicted near the domain boundaries by first-principle calculation, suggesting carrier localization and efficient radiative recombination. More importantly, lateral band diagrams of the MQWs are proposed based on electron affinities and valance band levels calculated from ultraviolet (UV) photoelectron spectroscopy. The proposed lateral band diagram is further demonstrated by surface potential distribution collected by Kelvin probe microscopy and the density-of-state calculation of energy bands. This work illustrates that lateral polarity structures are playing essential roles in the electronic properties of III-nitride photonic devices and may provide novel perspective in the realization of high-efficiency UV emitters.
Bibliographical noteKAUST Repository Item: Exported on 2021-07-13
Acknowledgements: National Key Research and Development Program of China (2016YFB0400802); National Natural Science Foundation of China (61704176, 61974149); Key Research and Development Program of Zhejiang Province (2019C01080, 2020C01145); Ningbo Innovation 2025 Major Project (2018B10088, 2019B10121).
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics