Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures

Haiding Sun; Feng Wu; Young Jae Park; T. M. Al tahtamouni; Che-Hao Liao; Wenzhe Guo; Nasir Alfaraj; Kuang-Hui Li; Dalaver H. Anjum; Theeradetch Detchprohm; Russell D. Dupuis; Xiaohang Li

doi:10.7567/APEX.11.011001

Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures

Haiding Sun, Feng Wu, Young Jae Park, T. M. Al tahtamouni, Che-Hao Liao, Wenzhe Guo, Nasir Alfaraj, Kuang-Hui Li, Dalaver H. Anjum, Theeradetch Detchprohm, Russell D. Dupuis, Xiaohang Li

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Abstract

We reveal the microstructure and dislocation behavior in 20-pair B0.14Al0.86N/Al0.70Ga0.30N multiple-stack heterostructures (MSHs) exhibiting an increasing dislocation density along the c-axis, which is attributed to the continuous generation of dislocations (edge and mixed-type) within the individual B0.14Al0.86N layers. At the MSH interfaces, the threading dislocations were accompanied by a string of V-shape pits extending to the surface, leading to interface roughening and the formation of surface columnar features. Strain maps indicated an approximately 1.5% tensile strain and 1% compressive strain in the B0.14Al0.86N and Al0.70Ga0.30N layers, respectively. Twin structures were observed, and the MSH eventually changed from monocrystalline to polycrystalline.

Original language	English (US)
Pages (from-to)	011001
Journal	Applied Physics Express
Volume	11
Issue number	1
DOIs	https://doi.org/10.7567/APEX.11.011001
State	Published - Dec 18 2017

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): REP/1/3189-01-01, BAS/1/1664-01-01, BAS/1/1664-01-07, GCC-2017-007
Acknowledgements: The KAUST authors acknowledge the support of the GCC Research Program REP/1/3189-01-01, Baseline BAS/1/1664-01-01, and Equipment BAS/1/1664-01-07. The work at QU was supported by the GCC Research Program GCC-2017-007. The work at the Georgia Institute of Technology was supported in part by DARPA under Grant No. W911NF-15-1-0026 and NSF under Grant No. DMR-1410874. R.D.D. acknowledges the additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and Georgia Research Alliance.

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https://repository.kaust.edu.sa/bitstream/10754/626578/1/J040_Sun_APEX_2018.pdf

Cite this

@article{158fa8ce32d34254a5df92593705ea07,

title = "Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures",

abstract = "We reveal the microstructure and dislocation behavior in 20-pair B0.14Al0.86N/Al0.70Ga0.30N multiple-stack heterostructures (MSHs) exhibiting an increasing dislocation density along the c-axis, which is attributed to the continuous generation of dislocations (edge and mixed-type) within the individual B0.14Al0.86N layers. At the MSH interfaces, the threading dislocations were accompanied by a string of V-shape pits extending to the surface, leading to interface roughening and the formation of surface columnar features. Strain maps indicated an approximately 1.5% tensile strain and 1% compressive strain in the B0.14Al0.86N and Al0.70Ga0.30N layers, respectively. Twin structures were observed, and the MSH eventually changed from monocrystalline to polycrystalline.",

author = "Haiding Sun and Feng Wu and Park, {Young Jae} and {Al tahtamouni}, {T. M.} and Che-Hao Liao and Wenzhe Guo and Nasir Alfaraj and Kuang-Hui Li and Anjum, {Dalaver H.} and Theeradetch Detchprohm and Dupuis, {Russell D.} and Xiaohang Li",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): REP/1/3189-01-01, BAS/1/1664-01-01, BAS/1/1664-01-07, GCC-2017-007 Acknowledgements: The KAUST authors acknowledge the support of the GCC Research Program REP/1/3189-01-01, Baseline BAS/1/1664-01-01, and Equipment BAS/1/1664-01-07. The work at QU was supported by the GCC Research Program GCC-2017-007. The work at the Georgia Institute of Technology was supported in part by DARPA under Grant No. W911NF-15-1-0026 and NSF under Grant No. DMR-1410874. R.D.D. acknowledges the additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and Georgia Research Alliance.",

year = "2017",

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doi = "10.7567/APEX.11.011001",

language = "English (US)",

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pages = "011001",

journal = "Applied Physics Express",

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publisher = "Japan Society of Applied Physics",

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T1 - Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures

AU - Sun, Haiding

AU - Wu, Feng

AU - Park, Young Jae

AU - Al tahtamouni, T. M.

AU - Liao, Che-Hao

AU - Guo, Wenzhe

AU - Alfaraj, Nasir

AU - Li, Kuang-Hui

AU - Anjum, Dalaver H.

AU - Detchprohm, Theeradetch

AU - Dupuis, Russell D.

AU - Li, Xiaohang

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): REP/1/3189-01-01, BAS/1/1664-01-01, BAS/1/1664-01-07, GCC-2017-007 Acknowledgements: The KAUST authors acknowledge the support of the GCC Research Program REP/1/3189-01-01, Baseline BAS/1/1664-01-01, and Equipment BAS/1/1664-01-07. The work at QU was supported by the GCC Research Program GCC-2017-007. The work at the Georgia Institute of Technology was supported in part by DARPA under Grant No. W911NF-15-1-0026 and NSF under Grant No. DMR-1410874. R.D.D. acknowledges the additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and Georgia Research Alliance.

PY - 2017/12/18

Y1 - 2017/12/18

N2 - We reveal the microstructure and dislocation behavior in 20-pair B0.14Al0.86N/Al0.70Ga0.30N multiple-stack heterostructures (MSHs) exhibiting an increasing dislocation density along the c-axis, which is attributed to the continuous generation of dislocations (edge and mixed-type) within the individual B0.14Al0.86N layers. At the MSH interfaces, the threading dislocations were accompanied by a string of V-shape pits extending to the surface, leading to interface roughening and the formation of surface columnar features. Strain maps indicated an approximately 1.5% tensile strain and 1% compressive strain in the B0.14Al0.86N and Al0.70Ga0.30N layers, respectively. Twin structures were observed, and the MSH eventually changed from monocrystalline to polycrystalline.

AB - We reveal the microstructure and dislocation behavior in 20-pair B0.14Al0.86N/Al0.70Ga0.30N multiple-stack heterostructures (MSHs) exhibiting an increasing dislocation density along the c-axis, which is attributed to the continuous generation of dislocations (edge and mixed-type) within the individual B0.14Al0.86N layers. At the MSH interfaces, the threading dislocations were accompanied by a string of V-shape pits extending to the surface, leading to interface roughening and the formation of surface columnar features. Strain maps indicated an approximately 1.5% tensile strain and 1% compressive strain in the B0.14Al0.86N and Al0.70Ga0.30N layers, respectively. Twin structures were observed, and the MSH eventually changed from monocrystalline to polycrystalline.

UR - http://hdl.handle.net/10754/626578

UR - http://iopscience.iop.org/article/10.7567/APEX.11.011001/meta

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U2 - 10.7567/APEX.11.011001

DO - 10.7567/APEX.11.011001

M3 - Article

SN - 1882-0778

VL - 11

SP - 011001

JO - Applied Physics Express

JF - Applied Physics Express

IS - 1

ER -

Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures

Abstract

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