Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures

Haiding Sun, Feng Wu, Young Jae Park, T. M. Al tahtamouni, Che-Hao Liao, Wenzhe Guo, Nasir Alfaraj, Kuang-Hui Li, Dalaver H. Anjum, Theeradetch Detchprohm, Russell D. Dupuis, Xiaohang Li

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


We reveal the microstructure and dislocation behavior in 20-pair B0.14Al0.86N/Al0.70Ga0.30N multiple-stack heterostructures (MSHs) exhibiting an increasing dislocation density along the c-axis, which is attributed to the continuous generation of dislocations (edge and mixed-type) within the individual B0.14Al0.86N layers. At the MSH interfaces, the threading dislocations were accompanied by a string of V-shape pits extending to the surface, leading to interface roughening and the formation of surface columnar features. Strain maps indicated an approximately 1.5% tensile strain and 1% compressive strain in the B0.14Al0.86N and Al0.70Ga0.30N layers, respectively. Twin structures were observed, and the MSH eventually changed from monocrystalline to polycrystalline.
Original languageEnglish (US)
Pages (from-to)011001
JournalApplied Physics Express
Issue number1
StatePublished - Dec 18 2017

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): REP/1/3189-01-01, BAS/1/1664-01-01, BAS/1/1664-01-07, GCC-2017-007
Acknowledgements: The KAUST authors acknowledge the support of the GCC Research Program REP/1/3189-01-01, Baseline BAS/1/1664-01-01, and Equipment BAS/1/1664-01-07. The work at QU was supported by the GCC Research Program GCC-2017-007. The work at the Georgia Institute of Technology was supported in part by DARPA under Grant No. W911NF-15-1-0026 and NSF under Grant No. DMR-1410874. R.D.D. acknowledges the additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and Georgia Research Alliance.


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