Revealing buried interfaces to understand the origins of threshold voltage shifts in organic field-effect transistors

Simon G.J. Mathijssen; Mark Jan Spijkman; Anne Marije Andringa; Paul A. Van Hal; Iain McCulloch; Martijn Kemerink; René A.J. Janssen; Dago M. De Leeuw

doi:10.1002/adma.201001865

Revealing buried interfaces to understand the origins of threshold voltage shifts in organic field-effect transistors

Simon G.J. Mathijssen, Mark Jan Spijkman, Anne Marije Andringa, Paul A. Van Hal, Iain McCulloch, Martijn Kemerink, René A.J. Janssen, Dago M. De Leeuw

Research output: Contribution to journal › Article › peer-review

108 Scopus citations

Abstract

The semiconductor of an organic field-effect transistor is stripped with adhesive tape, yielding an exposed gate dielectric, accessible for various characterization techniques. By using scanning Kelvin probe microscopy we reveal that trapped charges after gate bias stress are located at the gate dielectric and not in the semiconductor. Charging of the gate dielectric is confirmed by the fact that the threshold voltage shift remains, when a pristine organic semiconductor is deposited on the exposed gate dielectric of a stressed and delaminated field-effect transistor.

Original language	English (US)
Pages (from-to)	5105-5109
Number of pages	5
Journal	Advanced Materials
Volume	22
Issue number	45
DOIs	https://doi.org/10.1002/adma.201001865
State	Published - Dec 1 2010
Externally published	Yes

Keywords

charge trapping
exfoliation
organic field-effect transistors
scanning Kelvin probe microscopy
threshold voltage instabilities

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201001865

Cite this

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title = "Revealing buried interfaces to understand the origins of threshold voltage shifts in organic field-effect transistors",

abstract = "The semiconductor of an organic field-effect transistor is stripped with adhesive tape, yielding an exposed gate dielectric, accessible for various characterization techniques. By using scanning Kelvin probe microscopy we reveal that trapped charges after gate bias stress are located at the gate dielectric and not in the semiconductor. Charging of the gate dielectric is confirmed by the fact that the threshold voltage shift remains, when a pristine organic semiconductor is deposited on the exposed gate dielectric of a stressed and delaminated field-effect transistor.",

keywords = "charge trapping, exfoliation, organic field-effect transistors, scanning Kelvin probe microscopy, threshold voltage instabilities",

author = "Mathijssen, {Simon G.J.} and Spijkman, {Mark Jan} and Andringa, {Anne Marije} and {Van Hal}, {Paul A.} and Iain McCulloch and Martijn Kemerink and Janssen, {Ren{\'e} A.J.} and {De Leeuw}, {Dago M.}",

year = "2010",

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doi = "10.1002/adma.201001865",

language = "English (US)",

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AU - Mathijssen, Simon G.J.

AU - Spijkman, Mark Jan

AU - Andringa, Anne Marije

AU - Van Hal, Paul A.

AU - McCulloch, Iain

AU - Kemerink, Martijn

AU - Janssen, René A.J.

AU - De Leeuw, Dago M.

PY - 2010/12/1

Y1 - 2010/12/1

N2 - The semiconductor of an organic field-effect transistor is stripped with adhesive tape, yielding an exposed gate dielectric, accessible for various characterization techniques. By using scanning Kelvin probe microscopy we reveal that trapped charges after gate bias stress are located at the gate dielectric and not in the semiconductor. Charging of the gate dielectric is confirmed by the fact that the threshold voltage shift remains, when a pristine organic semiconductor is deposited on the exposed gate dielectric of a stressed and delaminated field-effect transistor.

AB - The semiconductor of an organic field-effect transistor is stripped with adhesive tape, yielding an exposed gate dielectric, accessible for various characterization techniques. By using scanning Kelvin probe microscopy we reveal that trapped charges after gate bias stress are located at the gate dielectric and not in the semiconductor. Charging of the gate dielectric is confirmed by the fact that the threshold voltage shift remains, when a pristine organic semiconductor is deposited on the exposed gate dielectric of a stressed and delaminated field-effect transistor.

KW - charge trapping

KW - exfoliation

KW - organic field-effect transistors

KW - scanning Kelvin probe microscopy

KW - threshold voltage instabilities

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U2 - 10.1002/adma.201001865

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SN - 0935-9648

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EP - 5109

JO - Advanced Materials

JF - Advanced Materials

IS - 45

ER -

Revealing buried interfaces to understand the origins of threshold voltage shifts in organic field-effect transistors

Abstract

Keywords

ASJC Scopus subject areas

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