Resonant tunnel magnetoresistance in a double magnetic tunnel junction

Arthur Useinov; Niazbeck Kh H Useinov; Lenar R. Tagirov; Jürgen Kosel

doi:10.1007/s10948-011-1221-6

Resonant tunnel magnetoresistance in a double magnetic tunnel junction

Arthur Useinov, Niazbeck Kh H Useinov, Lenar R. Tagirov, Jürgen Kosel

Research output: Contribution to journal › Article › peer-review

Abstract

We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FMW.© Springer Science+Business Media, LLC 2011.

Original language	English (US)
Pages (from-to)	2573-2576
Number of pages	4
Journal	Journal of Superconductivity and Novel Magnetism
Volume	25
Issue number	8
DOIs	https://doi.org/10.1007/s10948-011-1221-6
State	Published - Aug 9 2011

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The work was supported in part by the Ministry of Education and Science of Russian Federation, and the bilateral program RFBR (Project No. 10-02-91225-CT_a)-TUBITAK (No. 209T061).

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1007/s10948-011-1221-6

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@article{3997893f00784b1cb48a019fa9a4c577,

title = "Resonant tunnel magnetoresistance in a double magnetic tunnel junction",

abstract = "We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FMW.{\textcopyright} Springer Science+Business Media, LLC 2011.",

author = "Arthur Useinov and Useinov, {Niazbeck Kh H} and Tagirov, {Lenar R.} and J{\"u}rgen Kosel",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The work was supported in part by the Ministry of Education and Science of Russian Federation, and the bilateral program RFBR (Project No. 10-02-91225-CT_a)-TUBITAK (No. 209T061).",

year = "2011",

month = aug,

day = "9",

doi = "10.1007/s10948-011-1221-6",

language = "English (US)",

volume = "25",

pages = "2573--2576",

journal = "Journal of Superconductivity and Novel Magnetism",

issn = "1557-1939",

publisher = "Springer New York",

number = "8",

}

TY - JOUR

T1 - Resonant tunnel magnetoresistance in a double magnetic tunnel junction

AU - Useinov, Arthur

AU - Useinov, Niazbeck Kh H

AU - Tagirov, Lenar R.

AU - Kosel, Jürgen

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The work was supported in part by the Ministry of Education and Science of Russian Federation, and the bilateral program RFBR (Project No. 10-02-91225-CT_a)-TUBITAK (No. 209T061).

PY - 2011/8/9

Y1 - 2011/8/9

N2 - We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FMW.© Springer Science+Business Media, LLC 2011.

AB - We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FMW.© Springer Science+Business Media, LLC 2011.

UR - http://hdl.handle.net/10754/564418

UR - http://link.springer.com/10.1007/s10948-011-1221-6

UR - http://www.scopus.com/inward/record.url?scp=84870242310&partnerID=8YFLogxK

U2 - 10.1007/s10948-011-1221-6

DO - 10.1007/s10948-011-1221-6

M3 - Article

SN - 1557-1939

VL - 25

SP - 2573

EP - 2576

JO - Journal of Superconductivity and Novel Magnetism

JF - Journal of Superconductivity and Novel Magnetism

IS - 8

ER -

Resonant tunnel magnetoresistance in a double magnetic tunnel junction

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