Resistive Switching Devices Producing Giant Random Telegraph Noise

Thales Becker; Xuehua Li; Eduardo Moser; Pedro Alves; Gilson Wirth; Mario Lanza

doi:10.1109/LED.2021.3131863

Resistive Switching Devices Producing Giant Random Telegraph Noise

Thales Becker, Xuehua Li, Eduardo Moser, Pedro Alves, Gilson Wirth, Mario Lanza

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Resistive switching (RS) has been studied for several applications such as information storage and bio-inspired computing, although reliability issues still prevent their massive use. In this work, we present a novel observation of trapping activity that imposes giant random conductance fluctuations, up to 3 orders of magnitude, resembling RTN in RS devices based on TiO2, HfO2 and hexagonal boron nitride (h-BN) under reading voltages (~ 0.1 V). These events appeared reproducible for all the aforementioned RS device types in sequential measurements and under different bias. This behavior is very beneficial to ensure recognition of the device’s two-state in applications such as stochastic computing integrated circuits (ICs).

Original language	English (US)
Pages (from-to)	1-1
Number of pages	1
Journal	IEEE Electron Device Letters
DOIs	https://doi.org/10.1109/LED.2021.3131863
State	Published - 2021

Bibliographical note

KAUST Repository Item: Exported on 2022-01-27
Acknowledgements: This work has been supported by the Ministry of Science and Technology of China (grants no. 2018YFE0100800, 2019YFE0124200), and the National Natural Science Foundation of China (grants no. 11661131002, 61874075), the Ministry of Finance of China (grant no. SX21400213).

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@article{8def21b104234bb2a263c4d0eec51f6a,

title = "Resistive Switching Devices Producing Giant Random Telegraph Noise",

abstract = "Resistive switching (RS) has been studied for several applications such as information storage and bio-inspired computing, although reliability issues still prevent their massive use. In this work, we present a novel observation of trapping activity that imposes giant random conductance fluctuations, up to 3 orders of magnitude, resembling RTN in RS devices based on TiO2, HfO2 and hexagonal boron nitride (h-BN) under reading voltages (~ 0.1 V). These events appeared reproducible for all the aforementioned RS device types in sequential measurements and under different bias. This behavior is very beneficial to ensure recognition of the device{\textquoteright}s two-state in applications such as stochastic computing integrated circuits (ICs).",

author = "Thales Becker and Xuehua Li and Eduardo Moser and Pedro Alves and Gilson Wirth and Mario Lanza",

note = "KAUST Repository Item: Exported on 2022-01-27 Acknowledgements: This work has been supported by the Ministry of Science and Technology of China (grants no. 2018YFE0100800, 2019YFE0124200), and the National Natural Science Foundation of China (grants no. 11661131002, 61874075), the Ministry of Finance of China (grant no. SX21400213).",

year = "2021",

doi = "10.1109/LED.2021.3131863",

language = "English (US)",

pages = "1--1",

journal = "IEEE Electron Device Letters",

issn = "1558-0563",

publisher = "Institute of Electrical and Electronics Engineers",

}

TY - JOUR

T1 - Resistive Switching Devices Producing Giant Random Telegraph Noise

AU - Becker, Thales

AU - Li, Xuehua

AU - Moser, Eduardo

AU - Alves, Pedro

AU - Wirth, Gilson

AU - Lanza, Mario

N1 - KAUST Repository Item: Exported on 2022-01-27 Acknowledgements: This work has been supported by the Ministry of Science and Technology of China (grants no. 2018YFE0100800, 2019YFE0124200), and the National Natural Science Foundation of China (grants no. 11661131002, 61874075), the Ministry of Finance of China (grant no. SX21400213).

PY - 2021

Y1 - 2021

N2 - Resistive switching (RS) has been studied for several applications such as information storage and bio-inspired computing, although reliability issues still prevent their massive use. In this work, we present a novel observation of trapping activity that imposes giant random conductance fluctuations, up to 3 orders of magnitude, resembling RTN in RS devices based on TiO2, HfO2 and hexagonal boron nitride (h-BN) under reading voltages (~ 0.1 V). These events appeared reproducible for all the aforementioned RS device types in sequential measurements and under different bias. This behavior is very beneficial to ensure recognition of the device’s two-state in applications such as stochastic computing integrated circuits (ICs).

AB - Resistive switching (RS) has been studied for several applications such as information storage and bio-inspired computing, although reliability issues still prevent their massive use. In this work, we present a novel observation of trapping activity that imposes giant random conductance fluctuations, up to 3 orders of magnitude, resembling RTN in RS devices based on TiO2, HfO2 and hexagonal boron nitride (h-BN) under reading voltages (~ 0.1 V). These events appeared reproducible for all the aforementioned RS device types in sequential measurements and under different bias. This behavior is very beneficial to ensure recognition of the device’s two-state in applications such as stochastic computing integrated circuits (ICs).

UR - http://hdl.handle.net/10754/673851

UR - https://ieeexplore.ieee.org/document/9631285/

U2 - 10.1109/LED.2021.3131863

DO - 10.1109/LED.2021.3131863

M3 - Article

SN - 1558-0563

SP - 1

EP - 1

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -

Resistive Switching Devices Producing Giant Random Telegraph Noise

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