Resistive switching (RS) has been studied for several applications such as information storage and bio-inspired computing, although reliability issues still prevent their massive use. In this work, we present a novel observation of trapping activity that imposes giant random conductance fluctuations, up to 3 orders of magnitude, resembling RTN in RS devices based on TiO2, HfO2 and hexagonal boron nitride (h-BN) under reading voltages (~ 0.1 V). These events appeared reproducible for all the aforementioned RS device types in sequential measurements and under different bias. This behavior is very beneficial to ensure recognition of the device’s two-state in applications such as stochastic computing integrated circuits (ICs).
Bibliographical noteKAUST Repository Item: Exported on 2022-01-27
Acknowledgements: This work has been supported by the Ministry of Science and Technology of China (grants no. 2018YFE0100800, 2019YFE0124200), and the National Natural Science Foundation of China (grants no. 11661131002, 61874075), the Ministry of Finance of China (grant no. SX21400213).