Resistive Switching Crossbar Arrays Based on Layered Materials

Mario Lanza; Fei Hui; Chao Wen; Andrea C. Ferrari

doi:10.1002/adma.202205402

Resistive Switching Crossbar Arrays Based on Layered Materials

Mario Lanza, Fei Hui, Chao Wen, Andrea C. Ferrari

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

Resistive switching (RS) devices are metal/insulator/metal (MIM) cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they can be used to store and compute data. Planar crossbar arrays of RS devices can offer a high integration density (>108 devices/mm2) and this can be further enhanced by stacking them three-dimensionally. The advantage of using layered materials (LMs) in RS devices (compared to traditional phase-change materials and metal-oxides) is that their electrical properties can be adjusted with a higher precision. Here we define the key figures-of-merit and procedures to implement LM-based RS devices. We identify and discuss LM-based RS devices fabricated using methods compatible with industry. We focus on small devices (size

Original language	English (US)
Pages (from-to)	2205402
Journal	Advanced Materials
DOIs	https://doi.org/10.1002/adma.202205402
State	Published - Sep 12 2022

Bibliographical note

KAUST Repository Item: Exported on 2022-09-14
Acknowledgements: We acknowledge funding from the Baseline program of the King Abdullah University of Science and Technology, the Ministry of Science and Technology of China (grants no. 2018YFE0100800, 2019YFE0124200),the National Natural Science Foundation of China (grants no. 61874075)the Collaborative Innovation Centre of Suzhou Nano Science & Technology, the Priority Academic Program Development of Jiangsu Higher Education Institutions, the 111 Project from the State Administration of Foreign Experts Affairs of China, and the Technion-Guangdong Fellowship, the EU project CareRAMM, EU Graphene Flagship, ERC grants Hetero2D and MINERGRACE, EPSRC grants EP/K01711X/1, EP/K017144/1, EP/N010345/1, EP/M507799/1, EP/L016087/1, EP/V000055/1, DSTL.

ASJC Scopus subject areas

Mechanics of Materials
General Materials Science
Mechanical Engineering

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10.1002/adma.202205402

https://repository.kaust.edu.sa/bitstream/10754/681240/1/Advanced%20Materials%20-%202022%20-%20Lanza%20-%20Resistive%20Switching%20Crossbar%20Arrays%20Based%20on%20Layered%20Materials.pdf

Cite this

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title = "Resistive Switching Crossbar Arrays Based on Layered Materials",

abstract = "Resistive switching (RS) devices are metal/insulator/metal (MIM) cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they can be used to store and compute data. Planar crossbar arrays of RS devices can offer a high integration density (>108 devices/mm2) and this can be further enhanced by stacking them three-dimensionally. The advantage of using layered materials (LMs) in RS devices (compared to traditional phase-change materials and metal-oxides) is that their electrical properties can be adjusted with a higher precision. Here we define the key figures-of-merit and procedures to implement LM-based RS devices. We identify and discuss LM-based RS devices fabricated using methods compatible with industry. We focus on small devices (size",

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note = "KAUST Repository Item: Exported on 2022-09-14 Acknowledgements: We acknowledge funding from the Baseline program of the King Abdullah University of Science and Technology, the Ministry of Science and Technology of China (grants no. 2018YFE0100800, 2019YFE0124200),the National Natural Science Foundation of China (grants no. 61874075)the Collaborative Innovation Centre of Suzhou Nano Science & Technology, the Priority Academic Program Development of Jiangsu Higher Education Institutions, the 111 Project from the State Administration of Foreign Experts Affairs of China, and the Technion-Guangdong Fellowship, the EU project CareRAMM, EU Graphene Flagship, ERC grants Hetero2D and MINERGRACE, EPSRC grants EP/K01711X/1, EP/K017144/1, EP/N010345/1, EP/M507799/1, EP/L016087/1, EP/V000055/1, DSTL.",

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doi = "10.1002/adma.202205402",

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AU - Lanza, Mario

AU - Hui, Fei

AU - Wen, Chao

AU - Ferrari, Andrea C.

N1 - KAUST Repository Item: Exported on 2022-09-14 Acknowledgements: We acknowledge funding from the Baseline program of the King Abdullah University of Science and Technology, the Ministry of Science and Technology of China (grants no. 2018YFE0100800, 2019YFE0124200),the National Natural Science Foundation of China (grants no. 61874075)the Collaborative Innovation Centre of Suzhou Nano Science & Technology, the Priority Academic Program Development of Jiangsu Higher Education Institutions, the 111 Project from the State Administration of Foreign Experts Affairs of China, and the Technion-Guangdong Fellowship, the EU project CareRAMM, EU Graphene Flagship, ERC grants Hetero2D and MINERGRACE, EPSRC grants EP/K01711X/1, EP/K017144/1, EP/N010345/1, EP/M507799/1, EP/L016087/1, EP/V000055/1, DSTL.

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N2 - Resistive switching (RS) devices are metal/insulator/metal (MIM) cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they can be used to store and compute data. Planar crossbar arrays of RS devices can offer a high integration density (>108 devices/mm2) and this can be further enhanced by stacking them three-dimensionally. The advantage of using layered materials (LMs) in RS devices (compared to traditional phase-change materials and metal-oxides) is that their electrical properties can be adjusted with a higher precision. Here we define the key figures-of-merit and procedures to implement LM-based RS devices. We identify and discuss LM-based RS devices fabricated using methods compatible with industry. We focus on small devices (size

AB - Resistive switching (RS) devices are metal/insulator/metal (MIM) cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they can be used to store and compute data. Planar crossbar arrays of RS devices can offer a high integration density (>108 devices/mm2) and this can be further enhanced by stacking them three-dimensionally. The advantage of using layered materials (LMs) in RS devices (compared to traditional phase-change materials and metal-oxides) is that their electrical properties can be adjusted with a higher precision. Here we define the key figures-of-merit and procedures to implement LM-based RS devices. We identify and discuss LM-based RS devices fabricated using methods compatible with industry. We focus on small devices (size

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JO - Advanced Materials

JF - Advanced Materials

ER -

Resistive Switching Crossbar Arrays Based on Layered Materials

Abstract

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