Resistive switching behaviors of ZnO nanorod layers

Wen Yuan Chang; Chin An Lin; Jr Hau He; Tai Bor Wu

doi:10.1063/1.3453450

Resistive switching behaviors of ZnO nanorod layers

Wen Yuan Chang^*, Chin An Lin, Jr Hau He, Tai Bor Wu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

129 Scopus citations

Abstract

We have fabricated vertically aligned ZnO nanorod layers (NRLs) on indium tin oxide (ITO) electrodes using a hydrothermal process. The Pt/ZnO NRL/ITO capacitor exhibits bipolar resistive switching behavior. The resistive switching behavior may be related to the oxygen vacancies and/or zinc interstitials confined on the surface of the ZnO NRs, giving rise to the formation of straight and extensible conducting filaments along each vertically aligned ZnO NR. Superior stability in resistive switching characteristics was also observed, demonstrating that ZnO NRLs have the potential for next-generation nonvolatile memory applications.

Original language	English (US)
Article number	242109
Journal	Applied Physics Letters
Volume	96
Issue number	24
DOIs	https://doi.org/10.1063/1.3453450
State	Published - Jun 14 2010
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Resistive switching behaviors of ZnO nanorod layers",

abstract = "We have fabricated vertically aligned ZnO nanorod layers (NRLs) on indium tin oxide (ITO) electrodes using a hydrothermal process. The Pt/ZnO NRL/ITO capacitor exhibits bipolar resistive switching behavior. The resistive switching behavior may be related to the oxygen vacancies and/or zinc interstitials confined on the surface of the ZnO NRs, giving rise to the formation of straight and extensible conducting filaments along each vertically aligned ZnO NR. Superior stability in resistive switching characteristics was also observed, demonstrating that ZnO NRLs have the potential for next-generation nonvolatile memory applications.",

author = "Chang, {Wen Yuan} and Lin, {Chin An} and He, {Jr Hau} and Wu, {Tai Bor}",

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T1 - Resistive switching behaviors of ZnO nanorod layers

AU - Chang, Wen Yuan

AU - Lin, Chin An

AU - He, Jr Hau

AU - Wu, Tai Bor

PY - 2010/6/14

Y1 - 2010/6/14

N2 - We have fabricated vertically aligned ZnO nanorod layers (NRLs) on indium tin oxide (ITO) electrodes using a hydrothermal process. The Pt/ZnO NRL/ITO capacitor exhibits bipolar resistive switching behavior. The resistive switching behavior may be related to the oxygen vacancies and/or zinc interstitials confined on the surface of the ZnO NRs, giving rise to the formation of straight and extensible conducting filaments along each vertically aligned ZnO NR. Superior stability in resistive switching characteristics was also observed, demonstrating that ZnO NRLs have the potential for next-generation nonvolatile memory applications.

AB - We have fabricated vertically aligned ZnO nanorod layers (NRLs) on indium tin oxide (ITO) electrodes using a hydrothermal process. The Pt/ZnO NRL/ITO capacitor exhibits bipolar resistive switching behavior. The resistive switching behavior may be related to the oxygen vacancies and/or zinc interstitials confined on the surface of the ZnO NRs, giving rise to the formation of straight and extensible conducting filaments along each vertically aligned ZnO NR. Superior stability in resistive switching characteristics was also observed, demonstrating that ZnO NRLs have the potential for next-generation nonvolatile memory applications.

UR - http://www.scopus.com/inward/record.url?scp=77953797149&partnerID=8YFLogxK

U2 - 10.1063/1.3453450

DO - 10.1063/1.3453450

M3 - Article

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SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 242109

ER -

Resistive switching behaviors of ZnO nanorod layers

Abstract

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