Resistive memory for harsh electronics: Immunity to surface effect and high corrosion resistance via surface modification

Teng Han Huang; Po Kang Yang; Der Hsien Lien; Chen Fang Kang; Meng Lin Tsai; Yu Lun Chueh; Jr Hau He

doi:10.1038/srep04402

Resistive memory for harsh electronics: Immunity to surface effect and high corrosion resistance via surface modification

Teng Han Huang, Po Kang Yang, Der Hsien Lien, Chen Fang Kang, Meng Lin Tsai, Yu Lun Chueh, Jr Hau He^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

The tolerance/resistance of the electronic devices to extremely harsh environments is of supreme interest. Surface effects and chemical corrosion adversely affect stability and operation uniformity of metal oxide resistive memories. To achieve the surrounding-independent behavior, the surface modification is introduced into the ZnO memristors via incorporating fluorine to replace the oxygen sites. F-Zn bonds is formed to prevent oxygen chemisorption and ZnO dissolution upon corrosive atmospheric exposure, which effectively improves switching characteristics against harmful surroundings. In addition, the fluorine doping stabilizes the cycling endurance and narrows the distribution of switching parameters. The outcomes provide valuable insights for future nonvolatile memory developments in harsh electronics.

Original language	English (US)
Article number	4402
Journal	Scientific Reports
Volume	4
DOIs	https://doi.org/10.1038/srep04402
State	Published - Mar 18 2014
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by National Science Council of Taiwan (99-2622-E-002-019-CC3, 99-2112-M-002-024-MY3, and 99-2120-M-007-011) and National Taiwan University (10R70823).

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title = "Resistive memory for harsh electronics: Immunity to surface effect and high corrosion resistance via surface modification",

abstract = "The tolerance/resistance of the electronic devices to extremely harsh environments is of supreme interest. Surface effects and chemical corrosion adversely affect stability and operation uniformity of metal oxide resistive memories. To achieve the surrounding-independent behavior, the surface modification is introduced into the ZnO memristors via incorporating fluorine to replace the oxygen sites. F-Zn bonds is formed to prevent oxygen chemisorption and ZnO dissolution upon corrosive atmospheric exposure, which effectively improves switching characteristics against harmful surroundings. In addition, the fluorine doping stabilizes the cycling endurance and narrows the distribution of switching parameters. The outcomes provide valuable insights for future nonvolatile memory developments in harsh electronics.",

author = "Huang, {Teng Han} and Yang, {Po Kang} and Lien, {Der Hsien} and Kang, {Chen Fang} and Tsai, {Meng Lin} and Chueh, {Yu Lun} and He, {Jr Hau}",

note = "Funding Information: This work was supported by National Science Council of Taiwan (99-2622-E-002-019-CC3, 99-2112-M-002-024-MY3, and 99-2120-M-007-011) and National Taiwan University (10R70823).",

year = "2014",

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day = "18",

doi = "10.1038/srep04402",

language = "English (US)",

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AU - Huang, Teng Han

AU - Yang, Po Kang

AU - Lien, Der Hsien

AU - Kang, Chen Fang

AU - Tsai, Meng Lin

AU - Chueh, Yu Lun

AU - He, Jr Hau

N1 - Funding Information: This work was supported by National Science Council of Taiwan (99-2622-E-002-019-CC3, 99-2112-M-002-024-MY3, and 99-2120-M-007-011) and National Taiwan University (10R70823).

PY - 2014/3/18

Y1 - 2014/3/18

N2 - The tolerance/resistance of the electronic devices to extremely harsh environments is of supreme interest. Surface effects and chemical corrosion adversely affect stability and operation uniformity of metal oxide resistive memories. To achieve the surrounding-independent behavior, the surface modification is introduced into the ZnO memristors via incorporating fluorine to replace the oxygen sites. F-Zn bonds is formed to prevent oxygen chemisorption and ZnO dissolution upon corrosive atmospheric exposure, which effectively improves switching characteristics against harmful surroundings. In addition, the fluorine doping stabilizes the cycling endurance and narrows the distribution of switching parameters. The outcomes provide valuable insights for future nonvolatile memory developments in harsh electronics.

AB - The tolerance/resistance of the electronic devices to extremely harsh environments is of supreme interest. Surface effects and chemical corrosion adversely affect stability and operation uniformity of metal oxide resistive memories. To achieve the surrounding-independent behavior, the surface modification is introduced into the ZnO memristors via incorporating fluorine to replace the oxygen sites. F-Zn bonds is formed to prevent oxygen chemisorption and ZnO dissolution upon corrosive atmospheric exposure, which effectively improves switching characteristics against harmful surroundings. In addition, the fluorine doping stabilizes the cycling endurance and narrows the distribution of switching parameters. The outcomes provide valuable insights for future nonvolatile memory developments in harsh electronics.

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Resistive memory for harsh electronics: Immunity to surface effect and high corrosion resistance via surface modification

Abstract

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