TY - PAT
T1 - Resistive content addressable memory based in-memory computation architecture
AU - Salama, Khaled N.
AU - Zidan, Mohammed A.
AU - Kurdahi, Fadi
AU - Eltawil, Ahmed M.
N1 - KAUST Repository Item: Exported on 2019-02-13
PY - 2016/12/8
Y1 - 2016/12/8
N2 - Various examples are provided examples related to resistive content addressable memory (RCAM) based in-memory computation architectures. In one example, a system includes a content addressable memory (CAM) including an array of cells having a memristor based crossbar and an interconnection switch matrix having a gateless memristor array, which is coupled to an output of the CAM. In another example, a method, includes comparing activated bit values stored a key register with corresponding bit values in a row of a CAM, setting a tag bit value to indicate that the activated bit values match the corresponding bit values, and writing masked key bit values to corresponding bit locations in the row of the CAM based on the tag bit value.
AB - Various examples are provided examples related to resistive content addressable memory (RCAM) based in-memory computation architectures. In one example, a system includes a content addressable memory (CAM) including an array of cells having a memristor based crossbar and an interconnection switch matrix having a gateless memristor array, which is coupled to an output of the CAM. In another example, a method, includes comparing activated bit values stored a key register with corresponding bit values in a row of a CAM, setting a tag bit value to indicate that the activated bit values match the corresponding bit values, and writing masked key bit values to corresponding bit locations in the row of the CAM based on the tag bit value.
UR - http://hdl.handle.net/10754/622648
UR - http://www.google.com/patents/WO2016193947A1
UR - http://worldwide.espacenet.com/publicationDetails/biblio?CC=WO&NR=2016193947A1&KC=A1&FT=D
M3 - Patent
M1 - WO 2016193947 A1
ER -