Reliability characteristics of metal/high-k PMOS with top interface engineered Band Offset Dielectric (BOD)

H. Rusty Harris; Siddarth Krishnan; Huang Chun Wen; Husam Alshareef; Aarthi Rao; Louis Solis; Prashant Majhi; Rino Choi; Byoung Hun Lee; Gennadi Bersuker; George A. Brown

doi:10.1109/RELPHY.2006.251312

Reliability characteristics of metal/high-k PMOS with top interface engineered Band Offset Dielectric (BOD)

H. Rusty Harris^*, Siddarth Krishnan, Huang Chun Wen, Husam Alshareef, Aarthi Rao, Louis Solis, Prashant Majhi, Rino Choi, Byoung Hun Lee, Gennadi Bersuker, George A. Brown

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Original language	English (US)
Title of host publication	2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual
Pages	661-662
Number of pages	2
DOIs	https://doi.org/10.1109/RELPHY.2006.251312
State	Published - 2006
Externally published	Yes
Event	44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 - San Jose, CA, United States Duration: Mar 26 2006 → Mar 30 2006

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Other

Other	44th Annual IEEE International Reliability Physics Symposium, IRPS 2006
Country/Territory	United States
City	San Jose, CA
Period	03/26/06 → 03/30/06

ASJC Scopus subject areas

General Engineering

Access to Document

10.1109/RELPHY.2006.251312

Cite this

Rusty Harris, H., Krishnan, S., Wen, H. C., Alshareef, H., Rao, A., Solis, L., Majhi, P., Choi, R., Lee, B. H., Bersuker, G., & Brown, G. A. (2006). Reliability characteristics of metal/high-k PMOS with top interface engineered Band Offset Dielectric (BOD). In 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual (pp. 661-662). Article 4017253 (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/RELPHY.2006.251312

@inproceedings{08619b2f9f4343fb82b62ed84936052a,

title = "Reliability characteristics of metal/high-k PMOS with top interface engineered Band Offset Dielectric (BOD)",

author = "{Rusty Harris}, H. and Siddarth Krishnan and Wen, {Huang Chun} and Husam Alshareef and Aarthi Rao and Louis Solis and Prashant Majhi and Rino Choi and Lee, {Byoung Hun} and Gennadi Bersuker and Brown, {George A.}",

year = "2006",

doi = "10.1109/RELPHY.2006.251312",

language = "English (US)",

isbn = "0780394992",

series = "IEEE International Reliability Physics Symposium Proceedings",

pages = "661--662",

booktitle = "2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual",

note = "44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 ; Conference date: 26-03-2006 Through 30-03-2006",

}

Rusty Harris, H, Krishnan, S, Wen, HC, Alshareef, H, Rao, A, Solis, L, Majhi, P, Choi, R, Lee, BH, Bersuker, G & Brown, GA 2006, Reliability characteristics of metal/high-k PMOS with top interface engineered Band Offset Dielectric (BOD). in 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual., 4017253, IEEE International Reliability Physics Symposium Proceedings, pp. 661-662, 44th Annual IEEE International Reliability Physics Symposium, IRPS 2006, San Jose, CA, United States, 03/26/06. https://doi.org/10.1109/RELPHY.2006.251312

Reliability characteristics of metal/high-k PMOS with top interface engineered Band Offset Dielectric (BOD). / Rusty Harris, H.; Krishnan, Siddarth; Wen, Huang Chun et al.
2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual. 2006. p. 661-662 4017253 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Reliability characteristics of metal/high-k PMOS with top interface engineered Band Offset Dielectric (BOD)

AU - Rusty Harris, H.

AU - Krishnan, Siddarth

AU - Wen, Huang Chun

AU - Alshareef, Husam

AU - Rao, Aarthi

AU - Solis, Louis

AU - Majhi, Prashant

AU - Choi, Rino

AU - Lee, Byoung Hun

AU - Bersuker, Gennadi

AU - Brown, George A.

PY - 2006

Y1 - 2006

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U2 - 10.1109/RELPHY.2006.251312

DO - 10.1109/RELPHY.2006.251312

M3 - Conference contribution

AN - SCOPUS:34250789188

SN - 0780394992

SN - 0780394984

SN - 9780780394988

T3 - IEEE International Reliability Physics Symposium Proceedings

SP - 661

EP - 662

BT - 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual

T2 - 44th Annual IEEE International Reliability Physics Symposium, IRPS 2006

Y2 - 26 March 2006 through 30 March 2006

ER -

Rusty Harris H, Krishnan S, Wen HC, Alshareef H, Rao A, Solis L et al. Reliability characteristics of metal/high-k PMOS with top interface engineered Band Offset Dielectric (BOD). In 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual. 2006. p. 661-662. 4017253. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/RELPHY.2006.251312

Reliability characteristics of metal/high-k PMOS with top interface engineered Band Offset Dielectric (BOD)

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