Reliability and gate conduction variability of HfO2-based MOS devices: A combined nanoscale and device level study

A. Bayerl, M. Lanza, M. Porti, F. Campabadal, M. Nafría, X. Aymerich, G. Benstetter

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

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Chemistry

Engineering & Materials Science