Reliability and gate conduction variability of HfO2-based MOS devices: A combined nanoscale and device level study

A. Bayerl; M. Lanza; M. Porti; F. Campabadal; M. Nafría; X. Aymerich; G. Benstetter

doi:10.1016/j.mee.2011.03.122

Reliability and gate conduction variability of HfO2-based MOS devices: A combined nanoscale and device level study

A. Bayerl, M. Lanza, M. Porti, F. Campabadal, M. Nafría, X. Aymerich, G. Benstetter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

The electrical properties and reliability of MOS devices based on high-k dielectrics can be affected when the gate stack is subjected to an annealing process, which can lead to the polycrystallization of the high-k layer. In this work, a Conductive Atomic Force Microscope (C-AFM) has been used to study the nanoscale electrical conduction and reliability of amorphous and polycrystalline HfO2 based gate stacks. The link between the nanoscale properties and the reliability and gate conduction variability of fully processed MOS devices has also been investigated. © 2011 Elsevier B.V. All rights reserved.

Original language	English (US)
Title of host publication	Microelectronic Engineering
Pages	1334-1337
Number of pages	4
DOIs	https://doi.org/10.1016/j.mee.2011.03.122
State	Published - Jul 1 2011
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2021-03-16

ASJC Scopus subject areas

Surfaces, Coatings and Films
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Condensed Matter Physics

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10.1016/j.mee.2011.03.122

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title = "Reliability and gate conduction variability of HfO2-based MOS devices: A combined nanoscale and device level study",

abstract = "The electrical properties and reliability of MOS devices based on high-k dielectrics can be affected when the gate stack is subjected to an annealing process, which can lead to the polycrystallization of the high-k layer. In this work, a Conductive Atomic Force Microscope (C-AFM) has been used to study the nanoscale electrical conduction and reliability of amorphous and polycrystalline HfO2 based gate stacks. The link between the nanoscale properties and the reliability and gate conduction variability of fully processed MOS devices has also been investigated. {\textcopyright} 2011 Elsevier B.V. All rights reserved.",

author = "A. Bayerl and M. Lanza and M. Porti and F. Campabadal and M. Nafr{\'i}a and X. Aymerich and G. Benstetter",

note = "Generated from Scopus record by KAUST IRTS on 2021-03-16",

year = "2011",

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day = "1",

doi = "10.1016/j.mee.2011.03.122",

language = "English (US)",

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T1 - Reliability and gate conduction variability of HfO2-based MOS devices: A combined nanoscale and device level study

AU - Bayerl, A.

AU - Lanza, M.

AU - Porti, M.

AU - Campabadal, F.

AU - Nafría, M.

AU - Aymerich, X.

AU - Benstetter, G.

N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16

PY - 2011/7/1

Y1 - 2011/7/1

N2 - The electrical properties and reliability of MOS devices based on high-k dielectrics can be affected when the gate stack is subjected to an annealing process, which can lead to the polycrystallization of the high-k layer. In this work, a Conductive Atomic Force Microscope (C-AFM) has been used to study the nanoscale electrical conduction and reliability of amorphous and polycrystalline HfO2 based gate stacks. The link between the nanoscale properties and the reliability and gate conduction variability of fully processed MOS devices has also been investigated. © 2011 Elsevier B.V. All rights reserved.

AB - The electrical properties and reliability of MOS devices based on high-k dielectrics can be affected when the gate stack is subjected to an annealing process, which can lead to the polycrystallization of the high-k layer. In this work, a Conductive Atomic Force Microscope (C-AFM) has been used to study the nanoscale electrical conduction and reliability of amorphous and polycrystalline HfO2 based gate stacks. The link between the nanoscale properties and the reliability and gate conduction variability of fully processed MOS devices has also been investigated. © 2011 Elsevier B.V. All rights reserved.

UR - https://linkinghub.elsevier.com/retrieve/pii/S0167931711003819

UR - http://www.scopus.com/inward/record.url?scp=79958058735&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2011.03.122

DO - 10.1016/j.mee.2011.03.122

M3 - Conference contribution

SP - 1334

EP - 1337

BT - Microelectronic Engineering

ER -

Reliability and gate conduction variability of HfO2-based MOS devices: A combined nanoscale and device level study

Abstract

Bibliographical note

ASJC Scopus subject areas

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