Relation between spin and momentum relaxation in ZnSe/ZnMgSSe quantum wells

D. Hägele, M. Oestreich, W. W. Rühle, J. Hoffmann, S. Wachter, H. Kalt, K. Ohkawa, D. Hommel

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations


First, we measure the coherence time of optically oriented carrier spins in wide gap quantum wells and observe an increase with temperature from less than 10 ps at 20 K to 500 ps at 200 K. Second, we measure the temperature dependence of the momentum relaxation time by four wave mixing and absorption experiments. The spin relaxation time is approximately proportional to the inverse of the momentum relaxation time. In the low-temperature regime, the strong increase of spin lifetime can be caused by motional narrowing due to the faster scattering of excitons with increasing temperature. In the high-temperature regime, quenching of the electron-hole spin flip dephasing due to an increasing ionization of excitons with increasing temperatures can prolongate spin lifetime.

Original languageEnglish (US)
Pages (from-to)338-340
Number of pages3
JournalPhysica B: Condensed Matter
Issue number1-4
StatePublished - Dec 1 1999
Externally publishedYes
EventProceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn
Duration: Jul 19 1999Jul 23 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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