Reduction in defect density over whole area of (11̄00) m-plane GaN using one-sidewall seeded epitaxial lateral overgrowth

T. Kawashima; T. Nagai; D. Iida; A. Miura; Y. Okadome; Y. Tsuchiya; M. Iwaya; S. Kamiyama; H. Amano; I. Akasaki

doi:10.1002/pssb.200674805

Reduction in defect density over whole area of (11̄00) m-plane GaN using one-sidewall seeded epitaxial lateral overgrowth

T. Kawashima, T. Nagai, D. Iida, A. Miura, Y. Okadome, Y. Tsuchiya, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

We succeeded in growing low-defect-density w-plane GaN on grooved m-plane GaN with SiO2 masks on the terrace region. By changing the V/III ratio, we were able to increase the growth rate of GaN on one sidewall, thereby achieving one-sidedwall lateral growth. Dislocations and stacking faults were decreased markedly over the whole area. The densities of dislocations and stacking faults were 1.3 × 107 (cm-2) and

Original language	English (US)
Pages (from-to)	1848-1852
Number of pages	5
Journal	Physica Status Solidi (B) Basic Research
Volume	244
Issue number	6
DOIs	https://doi.org/10.1002/pssb.200674805
State	Published - Jun 1 2007
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/pssb.200674805

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title = "Reduction in defect density over whole area of (1{\=1}00) m-plane GaN using one-sidewall seeded epitaxial lateral overgrowth",

abstract = "We succeeded in growing low-defect-density w-plane GaN on grooved m-plane GaN with SiO2 masks on the terrace region. By changing the V/III ratio, we were able to increase the growth rate of GaN on one sidewall, thereby achieving one-sidedwall lateral growth. Dislocations and stacking faults were decreased markedly over the whole area. The densities of dislocations and stacking faults were 1.3 × 107 (cm-2) and",

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T1 - Reduction in defect density over whole area of (11̄00) m-plane GaN using one-sidewall seeded epitaxial lateral overgrowth

AU - Kawashima, T.

AU - Nagai, T.

AU - Iida, D.

AU - Miura, A.

AU - Okadome, Y.

AU - Tsuchiya, Y.

AU - Iwaya, M.

AU - Kamiyama, S.

AU - Amano, H.

AU - Akasaki, I.

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2007/6/1

Y1 - 2007/6/1

N2 - We succeeded in growing low-defect-density w-plane GaN on grooved m-plane GaN with SiO2 masks on the terrace region. By changing the V/III ratio, we were able to increase the growth rate of GaN on one sidewall, thereby achieving one-sidedwall lateral growth. Dislocations and stacking faults were decreased markedly over the whole area. The densities of dislocations and stacking faults were 1.3 × 107 (cm-2) and

AB - We succeeded in growing low-defect-density w-plane GaN on grooved m-plane GaN with SiO2 masks on the terrace region. By changing the V/III ratio, we were able to increase the growth rate of GaN on one sidewall, thereby achieving one-sidedwall lateral growth. Dislocations and stacking faults were decreased markedly over the whole area. The densities of dislocations and stacking faults were 1.3 × 107 (cm-2) and

UR - https://onlinelibrary.wiley.com/doi/10.1002/pssb.200674805

UR - http://www.scopus.com/inward/record.url?scp=34250322723&partnerID=8YFLogxK

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VL - 244

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JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 6

ER -

Reduction in defect density over whole area of (11̄00) m-plane GaN using one-sidewall seeded epitaxial lateral overgrowth

Abstract

Bibliographical note

ASJC Scopus subject areas

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