Reduction and Increase in Thermal Conductivity of Si Irradiated with Ga+ via Focused Ion Beam

Seyedhamidreza Alaie, Mohammadhosein Ghasemi Baboly, Ying Bing Jiang, Susan B. Rempe, Dalaver H. Anjum, Saharoui Chaieb, Brian Francis Donovan, Ashutosh Giri, Chester J Szwejkowski, John Thomas Gaskins, Mirza Elahi, Drew Goettler, Jeffrey L. Braun, Patrick E. Hopkins, Zayd Chad Leseman

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


Focused Ion Beam (FIB) technology has become a valuable tool for the microelectronics industry and for the fabrication and preparation of samples at the micro/nanoscale. Its effects on the thermal transport properties of Si, however are not well understood, nor do experimental data exist. This paper presents a carefully designed set of experiments for the determination of the thermal conductivity of Si samples irradiated by Ga+ FIB. Generally, the thermal conductivity decreases with increasing ion dose. For doses of >1016 (Ga+/cm2), a reversal of the trend was observed due to recrystallization of Si. This report provides insight on the thermal transport considerations relevant to engineering of Si nanostructures and interfaces fabricated or prepared by FIB.
Original languageEnglish (US)
Pages (from-to)37679-37684
Number of pages6
JournalACS Applied Materials & Interfaces
Issue number43
StatePublished - Oct 3 2018

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: SA, MGB, DFG and ZCL acknowledge support from the National Science Foundation Division of CMMI under Award 1056077. Materials supplied by PEH et al. are based upon work partially supported by the Air Force Office of Scientific Research under award number FA9550-18-1-0352. PEH is also appreciative for support from the National Science Foundation, Grant No. CBET-1706388.


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