Abstract
An InGaN/GaN light-emitting diode (LED) consisting of special Si-doped barrier profile and graded-composition electron blocking layer (EBL) with varying Al composition was designed and simulated. The simulation results show that EBL can enhance the hole injection and electron confinement compared to nongraded EBL. Consequently, the LED with a special Si-doped barrier profile and graded EBL shows improved electrical and optical properties compared to LED with a special Si-doped barrier profile alone. In addition, the efficiency droop is reduced from 56.71% with nongraded EBL LEDs to 30.92% at a high injection current of 1000 A/cm2.
Original language | English (US) |
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Title of host publication | Lecture Notes in Electrical Engineering |
Publisher | Springer Verlagservice@springer.de |
Pages | 565-571 |
Number of pages | 7 |
ISBN (Print) | 9789811325526 |
DOIs | |
State | Published - Jan 1 2019 |
Externally published | Yes |