TY - GEN
T1 - Reducing efficiency droop for si-doped barrier model of GaN/InGaN multi-quantum well light-emitting diode by designing electron blocking layer
AU - Mahala, Pramila
AU - Goyal, Amit K.
AU - Singh, Sumitra
AU - Pal, Suchandan
N1 - Generated from Scopus record by KAUST IRTS on 2023-10-12
PY - 2019/1/1
Y1 - 2019/1/1
N2 - An InGaN/GaN light-emitting diode (LED) consisting of special Si-doped barrier profile and graded-composition electron blocking layer (EBL) with varying Al composition was designed and simulated. The simulation results show that EBL can enhance the hole injection and electron confinement compared to nongraded EBL. Consequently, the LED with a special Si-doped barrier profile and graded EBL shows improved electrical and optical properties compared to LED with a special Si-doped barrier profile alone. In addition, the efficiency droop is reduced from 56.71% with nongraded EBL LEDs to 30.92% at a high injection current of 1000 A/cm2.
AB - An InGaN/GaN light-emitting diode (LED) consisting of special Si-doped barrier profile and graded-composition electron blocking layer (EBL) with varying Al composition was designed and simulated. The simulation results show that EBL can enhance the hole injection and electron confinement compared to nongraded EBL. Consequently, the LED with a special Si-doped barrier profile and graded EBL shows improved electrical and optical properties compared to LED with a special Si-doped barrier profile alone. In addition, the efficiency droop is reduced from 56.71% with nongraded EBL LEDs to 30.92% at a high injection current of 1000 A/cm2.
UR - http://link.springer.com/10.1007/978-981-13-2553-3_55
UR - http://www.scopus.com/inward/record.url?scp=85057832123&partnerID=8YFLogxK
U2 - 10.1007/978-981-13-2553-3_55
DO - 10.1007/978-981-13-2553-3_55
M3 - Conference contribution
SN - 9789811325526
SP - 565
EP - 571
BT - Lecture Notes in Electrical Engineering
PB - Springer [email protected]
ER -