Reducing efficiency droop for si-doped barrier model of GaN/InGaN multi-quantum well light-emitting diode by designing electron blocking layer

Pramila Mahala; Amit K. Goyal; Sumitra Singh; Suchandan Pal

doi:10.1007/978-981-13-2553-3_55

Reducing efficiency droop for si-doped barrier model of GaN/InGaN multi-quantum well light-emitting diode by designing electron blocking layer

Pramila Mahala, Amit K. Goyal, Sumitra Singh, Suchandan Pal

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An InGaN/GaN light-emitting diode (LED) consisting of special Si-doped barrier profile and graded-composition electron blocking layer (EBL) with varying Al composition was designed and simulated. The simulation results show that EBL can enhance the hole injection and electron confinement compared to nongraded EBL. Consequently, the LED with a special Si-doped barrier profile and graded EBL shows improved electrical and optical properties compared to LED with a special Si-doped barrier profile alone. In addition, the efficiency droop is reduced from 56.71% with nongraded EBL LEDs to 30.92% at a high injection current of 1000 A/cm2.

Original language	English (US)
Title of host publication	Lecture Notes in Electrical Engineering
Publisher	Springer Verlagservice@springer.de
Pages	565-571
Number of pages	7
ISBN (Print)	9789811325526
DOIs	https://doi.org/10.1007/978-981-13-2553-3_55
State	Published - Jan 1 2019
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2023-10-12

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10.1007/978-981-13-2553-3_55

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title = "Reducing efficiency droop for si-doped barrier model of GaN/InGaN multi-quantum well light-emitting diode by designing electron blocking layer",

abstract = "An InGaN/GaN light-emitting diode (LED) consisting of special Si-doped barrier profile and graded-composition electron blocking layer (EBL) with varying Al composition was designed and simulated. The simulation results show that EBL can enhance the hole injection and electron confinement compared to nongraded EBL. Consequently, the LED with a special Si-doped barrier profile and graded EBL shows improved electrical and optical properties compared to LED with a special Si-doped barrier profile alone. In addition, the efficiency droop is reduced from 56.71% with nongraded EBL LEDs to 30.92% at a high injection current of 1000 A/cm2.",

author = "Pramila Mahala and Goyal, {Amit K.} and Sumitra Singh and Suchandan Pal",

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doi = "10.1007/978-981-13-2553-3_55",

language = "English (US)",

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Reducing efficiency droop for si-doped barrier model of GaN/InGaN multi-quantum well light-emitting diode by designing electron blocking layer. / Mahala, Pramila; Goyal, Amit K.; Singh, Sumitra et al.
Lecture Notes in Electrical Engineering. Springer Verlagservice@springer.de, 2019. p. 565-571.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Reducing efficiency droop for si-doped barrier model of GaN/InGaN multi-quantum well light-emitting diode by designing electron blocking layer

AU - Mahala, Pramila

AU - Goyal, Amit K.

AU - Singh, Sumitra

AU - Pal, Suchandan

N1 - Generated from Scopus record by KAUST IRTS on 2023-10-12

PY - 2019/1/1

Y1 - 2019/1/1

N2 - An InGaN/GaN light-emitting diode (LED) consisting of special Si-doped barrier profile and graded-composition electron blocking layer (EBL) with varying Al composition was designed and simulated. The simulation results show that EBL can enhance the hole injection and electron confinement compared to nongraded EBL. Consequently, the LED with a special Si-doped barrier profile and graded EBL shows improved electrical and optical properties compared to LED with a special Si-doped barrier profile alone. In addition, the efficiency droop is reduced from 56.71% with nongraded EBL LEDs to 30.92% at a high injection current of 1000 A/cm2.

AB - An InGaN/GaN light-emitting diode (LED) consisting of special Si-doped barrier profile and graded-composition electron blocking layer (EBL) with varying Al composition was designed and simulated. The simulation results show that EBL can enhance the hole injection and electron confinement compared to nongraded EBL. Consequently, the LED with a special Si-doped barrier profile and graded EBL shows improved electrical and optical properties compared to LED with a special Si-doped barrier profile alone. In addition, the efficiency droop is reduced from 56.71% with nongraded EBL LEDs to 30.92% at a high injection current of 1000 A/cm2.

UR - http://link.springer.com/10.1007/978-981-13-2553-3_55

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U2 - 10.1007/978-981-13-2553-3_55

DO - 10.1007/978-981-13-2553-3_55

M3 - Conference contribution

SN - 9789811325526

SP - 565

EP - 571

BT - Lecture Notes in Electrical Engineering

PB - Springer Verlagservice@springer.de

ER -

Reducing efficiency droop for si-doped barrier model of GaN/InGaN multi-quantum well light-emitting diode by designing electron blocking layer

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