Reducing charge trapping in PbS colloidal quantum dot solids

D. M. Balazs; M. I. Nugraha; S. Z. Bisri; M. Sytnyk; W. Heiss; M. A. Loi

doi:10.1063/1.4869216

Reducing charge trapping in PbS colloidal quantum dot solids

D. M. Balazs, M. I. Nugraha, S. Z. Bisri, M. Sytnyk, W. Heiss, M. A. Loi

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72 Scopus citations

Abstract

Understanding and improving charge transport in colloidal quantum dot solids is crucial for the development of efficient solar cells based on these materials. In this paper, we report high performance field-effect transistors based on lead-sulfide colloidal quantum dots (PbS CQDs) crosslinked with 3-mercaptopropionic acid (MPA). Electron mobility up to 0.03 cm²/Vs and on/off ratio above 10⁵ was measured; the later value is the highest in the literature for CQD Field effect transistors with silicon-oxide gating. This was achieved by using high quality material and preventing trap generation during fabrication and measurement. We show that air exposure has a reversible p-type doping effect on the devices, and that intrinsically MPA is an n-type dopant for PbS CQDs.

Original language	English (US)
Article number	112104
Journal	Applied Physics Letters
Volume	104
Issue number	11
DOIs	https://doi.org/10.1063/1.4869216
State	Published - Mar 17 2014

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Understanding and improving charge transport in colloidal quantum dot solids is crucial for the development of efficient solar cells based on these materials. In this paper, we report high performance field-effect transistors based on lead-sulfide colloidal quantum dots (PbS CQDs) crosslinked with 3-mercaptopropionic acid (MPA). Electron mobility up to 0.03 cm2/Vs and on/off ratio above 105 was measured; the later value is the highest in the literature for CQD Field effect transistors with silicon-oxide gating. This was achieved by using high quality material and preventing trap generation during fabrication and measurement. We show that air exposure has a reversible p-type doping effect on the devices, and that intrinsically MPA is an n-type dopant for PbS CQDs.",

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AU - Balazs, D. M.

AU - Nugraha, M. I.

AU - Bisri, S. Z.

AU - Sytnyk, M.

AU - Heiss, W.

AU - Loi, M. A.

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N2 - Understanding and improving charge transport in colloidal quantum dot solids is crucial for the development of efficient solar cells based on these materials. In this paper, we report high performance field-effect transistors based on lead-sulfide colloidal quantum dots (PbS CQDs) crosslinked with 3-mercaptopropionic acid (MPA). Electron mobility up to 0.03 cm2/Vs and on/off ratio above 105 was measured; the later value is the highest in the literature for CQD Field effect transistors with silicon-oxide gating. This was achieved by using high quality material and preventing trap generation during fabrication and measurement. We show that air exposure has a reversible p-type doping effect on the devices, and that intrinsically MPA is an n-type dopant for PbS CQDs.

AB - Understanding and improving charge transport in colloidal quantum dot solids is crucial for the development of efficient solar cells based on these materials. In this paper, we report high performance field-effect transistors based on lead-sulfide colloidal quantum dots (PbS CQDs) crosslinked with 3-mercaptopropionic acid (MPA). Electron mobility up to 0.03 cm2/Vs and on/off ratio above 105 was measured; the later value is the highest in the literature for CQD Field effect transistors with silicon-oxide gating. This was achieved by using high quality material and preventing trap generation during fabrication and measurement. We show that air exposure has a reversible p-type doping effect on the devices, and that intrinsically MPA is an n-type dopant for PbS CQDs.

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Reducing charge trapping in PbS colloidal quantum dot solids

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