Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots

Rami T. Elafandy; Pallab K. Bhattacharya; Dong Kyu Cha; Tien Khee Ng; Boon S. Ooi; Meng Zhang

doi:10.1063/1.4751434

Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots

Rami T. Elafandy, Pallab K. Bhattacharya, Dong Kyu Cha, Tien Khee Ng, Boon S. Ooi, Meng Zhang

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Abstract

Differences in optical and structural properties of indium rich (27), indium gallium nitride (InGaN) self-organized quantum dots (QDs), with red wavelength emission, and the two dimensional underlying wetting layer (WL) are investigated. Temperature dependent micro-photoluminescence (?PL) reveals a decrease in thermal quenching of the QDs integrated intensity compared to that of the WL. This difference in behaviour is due to the 3-D localization of carriers within the QDs preventing them from thermalization to nearby traps causing an increase in the internal quantum efficiency of the device. Excitation power dependent ?PL shows a slower increase of the QDs PL signal compared to the WL PL which is believed to be due to the QDs saturation. © 2012 American Institute of Physics.

Original language	English (US)
Pages (from-to)	063506
Journal	Journal of Applied Physics
Volume	112
Issue number	6
DOIs	https://doi.org/10.1063/1.4751434
State	Published - Sep 18 2012

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ASJC Scopus subject areas

General Physics and Astronomy

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https://repository.kaust.edu.sa/bitstream/10754/312974/1/1.4751434.pdf

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@article{75fe735039dd4e3bbacbd509dc6edbb0,

title = "Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots",

abstract = "Differences in optical and structural properties of indium rich (27), indium gallium nitride (InGaN) self-organized quantum dots (QDs), with red wavelength emission, and the two dimensional underlying wetting layer (WL) are investigated. Temperature dependent micro-photoluminescence (?PL) reveals a decrease in thermal quenching of the QDs integrated intensity compared to that of the WL. This difference in behaviour is due to the 3-D localization of carriers within the QDs preventing them from thermalization to nearby traps causing an increase in the internal quantum efficiency of the device. Excitation power dependent ?PL shows a slower increase of the QDs PL signal compared to the WL PL which is believed to be due to the QDs saturation. {\textcopyright} 2012 American Institute of Physics.",

author = "Elafandy, {Rami T.} and Bhattacharya, {Pallab K.} and Cha, {Dong Kyu} and Ng, {Tien Khee} and Ooi, {Boon S.} and Meng Zhang",

note = "KAUST Repository Item: Exported on 2020-10-01",

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day = "18",

doi = "10.1063/1.4751434",

language = "English (US)",

volume = "112",

pages = "063506",

journal = "Journal of Applied Physics",

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TY - JOUR

T1 - Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots

AU - Elafandy, Rami T.

AU - Bhattacharya, Pallab K.

AU - Cha, Dong Kyu

AU - Ng, Tien Khee

AU - Ooi, Boon S.

AU - Zhang, Meng

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2012/9/18

Y1 - 2012/9/18

N2 - Differences in optical and structural properties of indium rich (27), indium gallium nitride (InGaN) self-organized quantum dots (QDs), with red wavelength emission, and the two dimensional underlying wetting layer (WL) are investigated. Temperature dependent micro-photoluminescence (?PL) reveals a decrease in thermal quenching of the QDs integrated intensity compared to that of the WL. This difference in behaviour is due to the 3-D localization of carriers within the QDs preventing them from thermalization to nearby traps causing an increase in the internal quantum efficiency of the device. Excitation power dependent ?PL shows a slower increase of the QDs PL signal compared to the WL PL which is believed to be due to the QDs saturation. © 2012 American Institute of Physics.

AB - Differences in optical and structural properties of indium rich (27), indium gallium nitride (InGaN) self-organized quantum dots (QDs), with red wavelength emission, and the two dimensional underlying wetting layer (WL) are investigated. Temperature dependent micro-photoluminescence (?PL) reveals a decrease in thermal quenching of the QDs integrated intensity compared to that of the WL. This difference in behaviour is due to the 3-D localization of carriers within the QDs preventing them from thermalization to nearby traps causing an increase in the internal quantum efficiency of the device. Excitation power dependent ?PL shows a slower increase of the QDs PL signal compared to the WL PL which is believed to be due to the QDs saturation. © 2012 American Institute of Physics.

UR - http://hdl.handle.net/10754/312974

UR - http://link.aip.org/link/JAPIAU/v112/i6/p063506/s1&Agg=doi

UR - http://www.scopus.com/inward/record.url?scp=84867073872&partnerID=8YFLogxK

U2 - 10.1063/1.4751434

DO - 10.1063/1.4751434

M3 - Article

SN - 0021-8979

VL - 112

SP - 063506

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots

Abstract

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