Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots

Rami T. Elafandy, Pallab K. Bhattacharya, Dong Kyu Cha, Tien Khee Ng, Boon S. Ooi, Meng Zhang

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Differences in optical and structural properties of indium rich (27), indium gallium nitride (InGaN) self-organized quantum dots (QDs), with red wavelength emission, and the two dimensional underlying wetting layer (WL) are investigated. Temperature dependent micro-photoluminescence (?PL) reveals a decrease in thermal quenching of the QDs integrated intensity compared to that of the WL. This difference in behaviour is due to the 3-D localization of carriers within the QDs preventing them from thermalization to nearby traps causing an increase in the internal quantum efficiency of the device. Excitation power dependent ?PL shows a slower increase of the QDs PL signal compared to the WL PL which is believed to be due to the QDs saturation. © 2012 American Institute of Physics.
Original languageEnglish (US)
Pages (from-to)063506
JournalJournal of Applied Physics
Issue number6
StatePublished - Sep 18 2012

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01

ASJC Scopus subject areas

  • General Physics and Astronomy


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