TY - JOUR
T1 - Reduced ion migration and enhanced photoresponse in cuboid crystals of methylammonium lead iodide perovskite
AU - Zhumekenov, Ayan A
AU - Haque, Mohammed
AU - Yin, Jun
AU - El-Zohry, Ahmed
AU - Lee, Kwangjae
AU - Dursun, Ibrahim
AU - Mohammed, Omar F.
AU - Baran, Derya
AU - Bakr, Osman
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors gratefully acknowledge the funding support provided by King Abdullah University of Science and Technology (KAUST).
PY - 2018/11/28
Y1 - 2018/11/28
N2 - The optoelectronic and photocatalytic properties of a number of semiconductor materials, including halide perovskites, have recently been found to be facet-dependent. While methylammonium lead iodide (CH3NH3PbI3) perovskite – an important material for energy applications – has shown facet-dependent electronic properties as well, most studies on CH3NH3PbI3 perovskite were performed on rhombo-dodecahedral (or rhombic) single crystals with the (200) and (112) facets exposed. In contrast, less is known about the electronic properties, including mixed conductivity behavior and possible in-plane anisotropy, of the (002) facet. Thus, we report a facile method for the growth of cuboid crystals of CH3NH3PbI3 perovskite with the (002) and (110) facets exposed. Two-terminal devices fabricated on the (002) facet demonstrate significantly improved charge transport and optoelectronic characteristics compared to those on the (200) facet of typical rhombic crystals, including: reduced ion migration, low dark current, and temporally-stable high photocurrents. These desirable characteristics of cuboid crystals are linked to their favorable growth conditions and preferred facet orientations. Our results provide a guidance for utilizing facets and crystal growth to achieve more efficient in-plane halide perovskite devices.
AB - The optoelectronic and photocatalytic properties of a number of semiconductor materials, including halide perovskites, have recently been found to be facet-dependent. While methylammonium lead iodide (CH3NH3PbI3) perovskite – an important material for energy applications – has shown facet-dependent electronic properties as well, most studies on CH3NH3PbI3 perovskite were performed on rhombo-dodecahedral (or rhombic) single crystals with the (200) and (112) facets exposed. In contrast, less is known about the electronic properties, including mixed conductivity behavior and possible in-plane anisotropy, of the (002) facet. Thus, we report a facile method for the growth of cuboid crystals of CH3NH3PbI3 perovskite with the (002) and (110) facets exposed. Two-terminal devices fabricated on the (002) facet demonstrate significantly improved charge transport and optoelectronic characteristics compared to those on the (200) facet of typical rhombic crystals, including: reduced ion migration, low dark current, and temporally-stable high photocurrents. These desirable characteristics of cuboid crystals are linked to their favorable growth conditions and preferred facet orientations. Our results provide a guidance for utilizing facets and crystal growth to achieve more efficient in-plane halide perovskite devices.
UR - http://hdl.handle.net/10754/629852
UR - http://iopscience.iop.org/article/10.1088/1361-6463/aaefdf
UR - http://www.scopus.com/inward/record.url?scp=85059128353&partnerID=8YFLogxK
U2 - 10.1088/1361-6463/aaefdf
DO - 10.1088/1361-6463/aaefdf
M3 - Article
SN - 0022-3727
VL - 52
SP - 054001
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
IS - 5
ER -