Reduced hot-carrier induced degradation of NMOS I/O transistors with sub-micron source-drain diffusion length for 0.11 μm dual gate oxide CMOS technology

Kwang Seng See*, Wai Shing Lau, Suey Li Toh, Hong Liao, Jae Gon Lee, L. I. Kun, Elgin Kiok Boone Quek, Kheng Chok Tee, Lap Hung Chan

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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