Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction

Abdullah I. Alhassan; Erin C. Young; Ahmed Y. Alyamani; Abdulrahman Albadri; Shuji Nakamura; Steven P. DenBaars; James S. Speck

doi:10.7567/apex.11.042101

Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction

Abdullah I. Alhassan, Erin C. Young, Ahmed Y. Alyamani, Abdulrahman Albadri, Shuji Nakamura, Steven P. DenBaars, James S. Speck

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

We report the fabrication of low-droop high-efficiency green c-plane light-emitting diodes (LEDs) utilizing GaN tunnel junction (TJ) contacts. The LED epitaxial layers with a top p-GaN layer were grown by metal organic chemical vapor deposition and an n++-GaN layer was deposited by molecular beam epitaxy to form a TJ. The TJ LEDs were then compared with equivalent LEDs having a tin-doped indium oxide (ITO) contact. The TJ LEDs exhibited a higher performance and a lower efficiency droop than did the ITO LEDs. At 35 A/cm2, the external quantum efficiencies for the TJ and ITO LEDs were 31.2 and 27%, respectively.

Original language	English (US)
Pages (from-to)	042101
Journal	Applied Physics Express
Volume	11
Issue number	4
DOIs	https://doi.org/10.7567/apex.11.042101
State	Published - Mar 1 2018
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was funded by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program and the KACST-KAUST-UCSB Solid State Lighting Program. Additional support was provided by the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB. A portion of this work was carried out in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR-1121053).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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title = "Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction",

abstract = "We report the fabrication of low-droop high-efficiency green c-plane light-emitting diodes (LEDs) utilizing GaN tunnel junction (TJ) contacts. The LED epitaxial layers with a top p-GaN layer were grown by metal organic chemical vapor deposition and an n++-GaN layer was deposited by molecular beam epitaxy to form a TJ. The TJ LEDs were then compared with equivalent LEDs having a tin-doped indium oxide (ITO) contact. The TJ LEDs exhibited a higher performance and a lower efficiency droop than did the ITO LEDs. At 35 A/cm2, the external quantum efficiencies for the TJ and ITO LEDs were 31.2 and 27%, respectively.",

author = "Alhassan, {Abdullah I.} and Young, {Erin C.} and Alyamani, {Ahmed Y.} and Abdulrahman Albadri and Shuji Nakamura and DenBaars, {Steven P.} and Speck, {James S.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was funded by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program and the KACST-KAUST-UCSB Solid State Lighting Program. Additional support was provided by the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB. A portion of this work was carried out in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR-1121053). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

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doi = "10.7567/apex.11.042101",

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T1 - Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction

AU - Alhassan, Abdullah I.

AU - Young, Erin C.

AU - Alyamani, Ahmed Y.

AU - Albadri, Abdulrahman

AU - Nakamura, Shuji

AU - DenBaars, Steven P.

AU - Speck, James S.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was funded by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program and the KACST-KAUST-UCSB Solid State Lighting Program. Additional support was provided by the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB. A portion of this work was carried out in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR-1121053). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2018/3/1

Y1 - 2018/3/1

N2 - We report the fabrication of low-droop high-efficiency green c-plane light-emitting diodes (LEDs) utilizing GaN tunnel junction (TJ) contacts. The LED epitaxial layers with a top p-GaN layer were grown by metal organic chemical vapor deposition and an n++-GaN layer was deposited by molecular beam epitaxy to form a TJ. The TJ LEDs were then compared with equivalent LEDs having a tin-doped indium oxide (ITO) contact. The TJ LEDs exhibited a higher performance and a lower efficiency droop than did the ITO LEDs. At 35 A/cm2, the external quantum efficiencies for the TJ and ITO LEDs were 31.2 and 27%, respectively.

AB - We report the fabrication of low-droop high-efficiency green c-plane light-emitting diodes (LEDs) utilizing GaN tunnel junction (TJ) contacts. The LED epitaxial layers with a top p-GaN layer were grown by metal organic chemical vapor deposition and an n++-GaN layer was deposited by molecular beam epitaxy to form a TJ. The TJ LEDs were then compared with equivalent LEDs having a tin-doped indium oxide (ITO) contact. The TJ LEDs exhibited a higher performance and a lower efficiency droop than did the ITO LEDs. At 35 A/cm2, the external quantum efficiencies for the TJ and ITO LEDs were 31.2 and 27%, respectively.

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U2 - 10.7567/apex.11.042101

DO - 10.7567/apex.11.042101

M3 - Article

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VL - 11

SP - 042101

JO - Applied Physics Express

JF - Applied Physics Express

IS - 4

ER -

Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction

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