Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction

Abdullah I. Alhassan, Erin C. Young, Ahmed Y. Alyamani, Abdulrahman Albadri, Shuji Nakamura, Steven P. DenBaars, James S. Speck

Research output: Contribution to journalArticlepeer-review

28 Scopus citations


We report the fabrication of low-droop high-efficiency green c-plane light-emitting diodes (LEDs) utilizing GaN tunnel junction (TJ) contacts. The LED epitaxial layers with a top p-GaN layer were grown by metal organic chemical vapor deposition and an n++-GaN layer was deposited by molecular beam epitaxy to form a TJ. The TJ LEDs were then compared with equivalent LEDs having a tin-doped indium oxide (ITO) contact. The TJ LEDs exhibited a higher performance and a lower efficiency droop than did the ITO LEDs. At 35 A/cm2, the external quantum efficiencies for the TJ and ITO LEDs were 31.2 and 27%, respectively.
Original languageEnglish (US)
Pages (from-to)042101
JournalApplied Physics Express
Issue number4
StatePublished - Mar 1 2018
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was funded by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program and the KACST-KAUST-UCSB Solid State Lighting Program. Additional support was provided by the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB. A portion of this work was carried out in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR-1121053).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.


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