Red to near-infrared emission from InGaN/GaN quantum-disks-in-nanowires LED

Tien Khee Ng, Chao Zhao, Chao Shen, Shafat Jahangir, Bilal Janjua, Ahmed Ben Slimane, Chun Hong Kang, Ahad A. Syed, Jingqi Li, Ahmed Y. Alyamani, Munir M. El-Desouki, Pallab Bhattacharya, Boon S. Ooi

Research output: Contribution to conferencePaperpeer-review

4 Scopus citations

Abstract

The InGaN/GaN quantum-disks-in-nanowire light-emitting diode (LED) with emission centered at ∼830nm, the longest emission wavelength ever reported in the InGaN/GaN system, and spectral linewidth of 290nm, has been fabricated with p-side-down on a Cu substrate.

Original languageEnglish (US)
StatePublished - 2014
Event2014 Conference on Lasers and Electro-Optics, CLEO 2014 - San Jose, United States
Duration: Jun 8 2014Jun 13 2014

Other

Other2014 Conference on Lasers and Electro-Optics, CLEO 2014
Country/TerritoryUnited States
CitySan Jose
Period06/8/1406/13/14

Bibliographical note

Publisher Copyright:
© 2014 Optical Society of America.

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

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