Abstract
Improving the passivation of contacts in silicon (Si) solar cells is crucial for reaching high-efficiency devices. In this study, the impact of the contact work function on the obtained passivation is examined and quantified using a novel method—quasi-steady-state photoluminescence—which provides access to the surface saturation current density after metallisation (J0s,m). The obtained J0s,m indicates an improvement of the surface passivation when contacts with high work function are applied onto Si wafers passivated with aluminium oxide, regardless of the wafer doping type. This improvement is mainly due to the amplification of the imbalance between the electron and hole concentrations near the Si interface. The passivation quality is reduced when using contacts with low work function in which the recombination rate increases via the charge-assisted carrier population control. This study points to the vital importance of selecting suitable metals to minimise contact recombination in high-efficiency solar cells.
| Original language | English (US) |
|---|---|
| Journal | Solar RRL |
| DOIs | |
| State | Published - Mar 15 2023 |
Bibliographical note
KAUST Repository Item: Exported on 2023-03-20Acknowledgements: This work was supported by the Australian Government through the Australian Renewable Energy Agency [ARENA; projects2017/RND001and 2020/RND016]. R.S.Bonilla was supported by the UK Royal Academy of Engineering under the Research Fellowship Scheme, and by the UK Engineering and Physical Sciences Research Council grant number EP/V038605/1. L.E. Black was supported by ARENA [project 2020/RND009]. The views expressed herein are not necessarily the views of the Australian Government, and the Australian Government does not accept responsibility for any information or advice contained herein.