Recombination barrier layers in solid-state quantum dot-sensitized solar cells

Katherine E. Roelofs, Thomas P. Brennan, Juan C. Dominguez, Stacey F. Bent

Research output: Chapter in Book/Report/Conference proceedingConference contribution


By replacing the dye in the dye-sensitized solar cell design with semiconductor quantum dots as the light-absorbing material, solid-state quantum dot-sensitized solar cells (ss-QDSSCs) were fabricated. Cadmium sulfide quantum dots (QDs) were grown in situ by successive ion layer adsorption and reaction (SILAR). Aluminum oxide recombination barrier layers were deposited by atomic layer deposition (ALD) at the TiO2/hole-conductor interface. For low numbers of ALD cycles, the Al2O3 barrier layer increased open circuit voltage, causing an increase in device efficiency. For thicker Al2O3 barrier layers, photocurrent decreased substantially, leading to a decrease in device efficiency. © 2012 IEEE.
Original languageEnglish (US)
Title of host publication2012 38th IEEE Photovoltaic Specialists Conference
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
ISBN (Print)9781467300667
StatePublished - Jun 2012
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: We would like to thank the McGehee group at Stanford forthe use of materials and equipment. This work was supportedby the Center for Advanced Molecular Photovoltaics, made bythe King Abdullah University of Science and Technology(KAUST).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.


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