Recent progress in InAs/InP quantum dash nanostructures and devices

Boon S. Ooi, Mohammed Zahed Mustafa Khan, Tien Khee Ng

Research output: Chapter in Book/Report/Conference proceedingConference contribution


In this talk, we will give an outline and introduction to the broad inter-band emission devices focusing on the InAs/InP quantum dash material system, device physics and establishment of ultrabroad stimulated emission behavior. In addition, technologies for growing these nanostructures as well as engineer the bandgap of quantum dash based system using epitaxy growth techniques and postgrowth intermixing methods will be presented. At device level, we will focus our discussion on our recent progress in extending the ultra-broad lasing emission from quantum dash lasers, and achievements in broad gain semiconductor optical amplifiers (SOA), mode locked lasers, comb-lasers, wide band superluminsect diodes fabricated on this material system. © 2015 IEEE.
Original languageEnglish (US)
Title of host publication2015 IEEE Nanotechnology Materials and Devices Conference (NMDC)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
ISBN (Print)9781467393621
StatePublished - Mar 24 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01


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